Laser-driven boron diffusion into a Si epitaxial layer from a p[sup +] boron-doped Si substrate

Kim, K.M.; Mei, S.N.
August 1992
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1066
Academic Journal
Examines the laser driven boron diffusion into a silicon (Si) epitaxial layer from a p[sup +] boron-doped Si substrates. Occurrence of local melting and refreezing of the layer and the underlying Si substrate; Surface diameter of the recrystallized front; Features of the contacting substrate.


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