TITLE

Laser-driven boron diffusion into a Si epitaxial layer from a p[sup +] boron-doped Si substrate

AUTHOR(S)
Kim, K.M.; Mei, S.N.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1066
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the laser driven boron diffusion into a silicon (Si) epitaxial layer from a p[sup +] boron-doped Si substrates. Occurrence of local melting and refreezing of the layer and the underlying Si substrate; Surface diameter of the recrystallized front; Features of the contacting substrate.
ACCESSION #
4255042

 

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