TITLE

Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas-source

AUTHOR(S)
Asahi, H.; Hisaka, T.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1054
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the influence of hydrogen on the step flow growth of gallium arsenide (GaAs) on the vicinal surfaces by gas-source migration enhanced epitaxy. Analysis of the reflection high-energy electron diffraction intensity oscillation; Advantage of using AsH[sub 3] over solid As; Factors responsible for the enhancement of step flow growth of GaAs.
ACCESSION #
4255038

 

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