Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas-source

Asahi, H.; Hisaka, T.
August 1992
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1054
Academic Journal
Investigates the influence of hydrogen on the step flow growth of gallium arsenide (GaAs) on the vicinal surfaces by gas-source migration enhanced epitaxy. Analysis of the reflection high-energy electron diffraction intensity oscillation; Advantage of using AsH[sub 3] over solid As; Factors responsible for the enhancement of step flow growth of GaAs.


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