Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620

Huang, K.H.; Yu, J.G.
August 1992
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1045
Academic Journal
Demonstrates the fabrication of aluminum gallium indium phosphide light-emitting diodes (LED) using a gallium phosphide window layer. Efficacy of the LED; Percentage of LED external quantum efficiencies; Use of hydride vapor phase epitaxy for the growth of GaP layer; Effect of emission wavelength on quantum efficiency.


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