TITLE

Nitrogen and oxygen incorporation during rapid thermal processing of Si in N[sub 2]O

AUTHOR(S)
Kuiper, A.E.T.; Pomp, H.G.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1031
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the nitrogen (N) and oxygen (O) incorporation during rapid thermal processing (RTP) of silicon (Si) in nitrogen oxide. Use of the high-energy ion-beam technique of elastic recoil detection; Degree of temperature required for the formation of Si nitride at Si dioxide/Si interface; Depth distribution of O and N in a sample prepared by RTP.
ACCESSION #
4255028

 

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