TITLE

Growth studies on Si[sub 0.8]Ge[sub 0.2] channel two-dimensional hole gases

AUTHOR(S)
Smith, D.W.; Emeleus, C.J.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1453
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the influence of molecular beam epitaxy on the low-temperature mobilities of silicon (Si)/Si germanide (Ge) two-dimensional hole gas structures (2DHG). Increase of Si liner in the Ge source by 2DHG mobilities; Dependence of 2DHG mobility on growth temperature; Domination of metal-induced interface charge on low-mobility samples.
ACCESSION #
4255014

 

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