TITLE

Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter

AUTHOR(S)
Wen-Chau Liu; Der-Feng Guo
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1441
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates gallium arsenide/aluminum gallium arsenide heterostructure-emitter bipolar transistor (HEBT). Effect of double (D) HEBT of reducing the offset voltage; Reduction of the DHEBT by the large spike of the base-collector homojunction; Use of the emitter edge-thinning technique for the DHEBT device.
ACCESSION #
4255010

 

Related Articles

  • Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors. Tiwari, Sandip; Frank, D. J.; Wright, Steven L. // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p5009 

    Discusses a study which examined the physical nature of surface recombination in gallium aluminum arsenide/gallium arsenide heterostructure bipolar transistors. Importance of recombination effects in minority-carrier gallium arsenide devices; Experiment and discussion; Theory and discussion.

  • High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector.... Kurishima, K.; Nakajima, H.; Kobayashi, T.; Matsuoka, Y.; Ishibashi, T. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2372 

    Fabricates a double-heterostructure bipolar transistor using InP and InGaAs materials. Pair doping at the heterointerface; Capability of suppressing collector current blocking; Use of metalorganic chemical vapor deposition; Electron transport properties of the InP collector.

  • Nonequilibrium electron transport in an AlGaAs/GaAs double-heterojunction bipolar transistor. Taira, K.; Kawai, H.; Kaneko, K. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2767 

    Examines the nonequilibrium electron transport in an AlGaAs/gallium arsenide (GaAs) double-heterojunction bipolar transistor (DHBT). Fabrication of the DHBT; Band diagram of an AlGaAs/GaAs DHBT; Base characteristics of the DHBT.

  • Analysis of a self-aligned AlGaAs/GaAs heterostructure bipolar transistor: Steady-state and transient simulations. Meyyappan, M.; Andrews, G.; Grubin, H. L.; Kreskovsky, J. P. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3348 

    Presents the results of a two-dimensional steady-state and transient simulation to examine the switching behavior of a self-aligned AlGaAs/gallium arsenide heterostructure bipolar transistor (HBT). Description of a two-dimensional model used in the study; Drift and diffusion equations...

  • Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures. Futatsugi, T.; Yamaguchi, Y.; Muto, S.; Yokoyama, N.; Shibatomi, A. // Journal of Applied Physics;2/15/1989, Vol. 65 Issue 4, p1771 

    Presents a study which described resonant tunneling bipolar transistor fabrication using indium aluminum arsenide/indium gallium arsenide heterostructures. Response time of the resonant tunneling barrier; Measurement of the microwave characteristics of the indium aluminum arsenide/indium...

  • Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNx. Jin, Z.; Prost, W.; Neumann, S.; Tegude, F.-J. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p777 

    Both the self- and non-self-aligned graded-base InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) were passivated by room-temperature deposited SiNx. Current gains were found to increase significantly after SiNx passivation. The passivation resulted in an increase in the leakage...

  • Barrier and recombination effects in the base-emitter junction of heterostructure bipolar transistors. Tiwari, Sandip; Frank, D. J. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p993 

    We show that high current densities with minimal space charge region recombination current can be obtained by a suitable choice of alloy grading parameters and doping of the junction. It is also shown that compositionally graded, but uniformly doped emitter junctions require a minimum doping...

  • Base doping limits in heterostructure bipolar transistors. Jalali, B.; Nottenburg, R. N.; Levi, A. F. J.; Hamm, R. A.; Panish, M. B.; Sivco, D.; Cho, A. Y. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1460 

    Heterostructure bipolar transistors are used to experimentally determine band offsets in lattice-matched In0.53Ga0.47As devices. Valence-band offsets of ΔEV=0.24 eV for Al0.48In0.52As/In0.53Ga0.47As and ΔEV=0.34 eV for InP/In0.53Ga0.47As are measured. Because of band filling in the base,...

  • Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy. Hamm, R.A.; Feygenson, A. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p592 

    Examines the growth of heterostructure bipolar transistors by selective area epitaxy (SAE). Detection of the SAE grown multilayer by scanning electron micrograph; Optimization of chloride molecule etching to improve the quality of the regrown junction; Effect of argon ion sputtering on grown...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics