Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter

Wen-Chau Liu; Der-Feng Guo
September 1992
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1441
Academic Journal
Fabricates gallium arsenide/aluminum gallium arsenide heterostructure-emitter bipolar transistor (HEBT). Effect of double (D) HEBT of reducing the offset voltage; Reduction of the DHEBT by the large spike of the base-collector homojunction; Use of the emitter edge-thinning technique for the DHEBT device.


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