Photoquenching of hopping conduction in low-temperature-grown molecular-beam-epitaxial GaAs

Fang, Z.-Q.; Look, D.C.
September 1992
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1438
Academic Journal
Observes the infrared (IR) photoquenching of the hopping conduction in low-temperature-molecular beam epitaxy gallium arsenide (GaAs). Photocurrent responses of GaAs samples after IR light illumination; Restoration of the photoquenched dark current as a function of illumination time; Recovery of hopping conduction at 140 Kelvin.


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