TITLE

Sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxy

AUTHOR(S)
Yu, P.W.; Reynolds, D.C.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1432
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the photoluminescence (PL) spectra of gallium arsenide layers by molecular beam epitaxy. Inclusion of no-phonon line and phonon sidebands in PL; Comparison of PL spectra between local and lattice phonon; Consistency of PL features with exciton.
ACCESSION #
4255007

 

Related Articles

  • Photoluminescence of Mg-doped GaAs grown by molecular beam epitaxy using Mg3As2 as a Mg source: A comparison with Mg+ ion implantation. Makita, Yunosuke; Takeuchi, Yoshinori; Ohnishi, Nobukazu; Nomura, Toshio; Kudo, Kazuhiro; Tanaka, Hideki; Lee, Hae-Chol; Mori, Masahiko; Mitsuhashi, Yoshinobu // Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1184 

    Photoluminescence spectra of Mg-doped GaAs grown by molecular beam epitaxy (MBE) are for the first time reported. Mg was introduced during MBE growth by using a synergic reaction of Mg3As2. Two near-band-edge emissions, g and [g-g], were observed below bound exciton emissions which were...

  • Determination of critical layer thickness in InxGa1-xAs/GaAs heterostructures by x-ray diffraction. Orders, P. J.; Usher, B. F. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p980 

    The critical thickness hc of strained InxGa1-xAs layers grown by molecular beam epitaxy on GaAs(100) substrates is determined by double-crystal x-ray diffraction for 0.07≤x≤0.25. The experimental results are in good agreement with critical thicknesses calculated from the energy...

  • Optical properties near the band gap on hexagonal and cubic GaN. Okumura, H.; Yoshida, S. // Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2997 

    Examines the measurement of photoluminescence and optical reflection spectra of cubic and hexagonal GaN films grown on gallium arsenide and 3C-SiC substrates. Performance of gas-source molecular beam epitaxy using microwave-activated NH[sub 3] source; Improvement of epilayer crystalline...

  • Photoluminescence from hot carriers in low-temperature-grown gallium arsenide. van Driel, H.M.; Zhou, X.-Q. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2246 

    Examines the band-to-band photoluminescence spectra of gallium arsenide by molecular beam epitaxy. Role of the photoluminescence spectra as a function of lattice temperature, laser photon energy and excitation intensity; Relation between the spectra and quasi steady state carrier distribution;...

  • Molecular beam epitaxial growth and optical characterization of GaAs/Al[sub x]Ga[sub 1-x]As.... Garcia, B.J.; Fontaine, C. // Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2691 

    Examines the molecular beam epitaxial growth conditions of gallium arsenide/aluminum gallium arsenide quantum wells on nominally oriented gallium arsenide substrates. Presentation of photoluminescence measurement; Significance of growth interruption for high temperatures; Discussion on the...

  • Photoluminescence studies of bound excitons in copper-doped GaAs. Villemaire, A.; Charbonneau, S.; Steiner, T.; Thewalt, M. L. W. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4244 

    Presents a study that investigated the photoluminescence of copper-related bound excitons in gallium arsenide semiconductors. Analysis of the decay of the luminescence of the excitons; Evaluation of the sequence of the transient photoluminescence spectra; Examination of the photoluminescence...

  • Evidence of isoelectronic traps in molecular beam epitaxy grown Zn[sub 1-x]Be[sub x]Se: Temperature- and pressure-dependent photoluminescence studies. Kim, Bosang S.; Kuskovsky, Igor L.; Tian, C.; Herman, Irving P.; Neumark, G. F.; Guo, S. P.; Tamargo, M. C. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4151 

    We have studied undoped Zn[sub 1-x]Be[sub x]Se alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep,...

  • Excitonic recombination in GaN grown by molecular beam epitaxy. Smith, M.; Chen, G. D. // Applied Physics Letters;12/4/1995, Vol. 67 Issue 23, p3387 

    Examines the free-excitonic transitions and dynamic processes in GaN grown by molecular beam epitaxy using time-resolved photoluminescence. Analysis on exciton photoluminescence spectral line shape, quantum yield and recombination lifetimes; Presence of superior crystalline quality and...

  • Donor�acceptor recombination in type-II GaAs/AlAs superlattices. Zhuravlev, K. S.; Gilinskii, A. M.; Shamirzaev, T. S.; Preobrazhenskii, V. V.; Semyagin, B. R.; Putyato, M. A.; Chipkin, S. S. // Physics of the Solid State;Sep98, Vol. 40 Issue 9, p1577 

    A study is reported of steady- and nonsteady-state photoluminescence of intentionally undoped and uniformly silicon-doped type-II (GaAs)[sub 7](AlAs)[sub 9] superlattices grown by MBE simultaneously on (311)A- and (100)-oriented GaAs substrates. It has been established that at elevated...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics