Sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxy

Yu, P.W.; Reynolds, D.C.
September 1992
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1432
Academic Journal
Examines the photoluminescence (PL) spectra of gallium arsenide layers by molecular beam epitaxy. Inclusion of no-phonon line and phonon sidebands in PL; Comparison of PL spectra between local and lattice phonon; Consistency of PL features with exciton.


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