TITLE

Single-crystal thin film InP: Fabrication and absorption measurements

AUTHOR(S)
Augustine, G.; Jokerst, N.M.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the separation of single-crystal indium phosphide (InP) thin films from the growth substrate. Use of thin films to determine InP absorption coefficients; Effects of the fabrication process on thin films; Performance of transmission measurements on thin-film InP samples.
ACCESSION #
4255006

 

Related Articles

  • Distributed Bragg reflectors for visible range applications based on (Zn,Cd,Mg)Se lattice matched to InP. Guo, S. P.; Guo, S.P.; Maksimov, O.; Tamargo, M. C.; Tamargo, M.C.; Peiris, F. C.; Peiris, F.C.; Furdyna, J. K.; Furdyna, J.K. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    Lattice-matched (Zn,Cd,Mg)Se epilayers were grown by molecular-beam epitaxy on InP substrates. X-ray diffraction and photoluminescence measurements show the high crystalline quality of the epilayers. Using a prism coupler technique, the index of refraction of the epilayers was investigated at...

  • X-ray interference measurement of ultrathin semiconductor layers. Wie, C. R.; Chen, J. C.; Kim, H. M.; Liu, P. L.; Choi, Y.-W.; Hwang, D. M. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1774 

    We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 Å and 107±3 Å for the single strained layer samples and 7 Å/50 Å and 32 Å/32...

  • Phase formation in the Pd-InP system. Caron-Popowich, R.; Washburn, J.; Sands, T.; Kaplan, A. S. // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p4909 

    Focuses on a study which examined the interaction of 40-nanometers palladium layers on chemically cleaned (100) indium phosphide substrates. Characteristics of palladium thin films on indium phosphide; Experimental procedure; Results and discussion.

  • Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO[sub 2] film on InP substrate. Liu, J.; Lam, Y.L.; Chan, Y.C.; Zhou, Y.; Ooi, B.S.; Yun, Z.S. // Applied Physics A: Materials Science & Processing;2000, Vol. 70 Issue 3, p341 

    In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the...

  • Be incorporation and surface morphologies in homoepitaxial InP films. Cotta, M.A.; de Carvalho, M.M.G. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1122 

    Examines the incorporation and surface morphologies of beryllium (Be) in homoepitaxial indium phosphide thin films. Calculation of Be concentration in the films; Factors attributing to the growth of oval defects; Application of Be to ultrahigh vacuum systems.

  • Elastic and anelastic properties of Fe-doped InP films on silicon cantilevers. Klose, F. B.; Harms, U.; Neuha¨user, H.; Bakin, A.; Behrens, I.; Peiner, E.; Wehmann, H.-H.; Schlachetzki, A.; Ro¨sler, J. // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9031 

    The effect of Fe doping on the elastic and anelastic properties of heteroepitaxial InP films on microfabricated silicon cantilevers has been investigated by the vibrating-reed technique (typical frequencies 100 Hz to 10 kHz) with strain amplitudes in the range of 10[sup -6] to 10[sup -3] and in...

  • Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma. Besland, M. P.; Jourba, S.; Lambrinos, M.; Louis, P.; Viktorovitch, P.; Hollinger, G. // Journal of Applied Physics;9/1/1996, Vol. 80 Issue 5, p3100 

    Focuses on a study which described the fabrication of device quality SiO[sub2]/InP structures. Background on the sample materials; Methods used; Findings.

  • High-purity lnP grown on Si by organometallic vapor phase epitaxy. Aina, O.; Mattingly, M.; Bates, J.R.; Coggins, A.; O'Connor, J.; Shastry, S.K.; Salerno, J.P.; Davis, A.; Lorenzo, J.P.; Jones, K.S. // Applied Physics Letters;4/8/1991, Vol. 58 Issue 14, p1554 

    Reports on the growth by organometallic vapor phase epitaxy high-purity InP on Si substrates using a GaAs intermediate layer. Residual electron concentration exhibited by the InP layers; Electrical properties.

  • Improvement in quality of epitaxial Zn[sub 0.5]Cd[sub 0.5]Se layers grown on (001) InP.... Snoeks, E.; Herko, S.; Zhao, L.; Yang, B.; Cavus, A.; Zeng, L.; Tamargo, M.C. // Applied Physics Letters;4/28/1997, Vol. 70 Issue 17, p2259 

    Examines the effect of incorporating an indium phosphide buffer layer on the structural and optical properties of ZnCdSe films. Use of transmission electron microscopy to observe stacking fault density reduction; Defects observed in the films; Behavior of the photoluminescence emission peak of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics