Point defect injection into silicon due to low-temperature surface modifications

Christensen, Carsten; Petersen, Jon Wulff
September 1992
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1426
Academic Journal
Examines the appearance of phosphorus-vacancy pairs in n-type silicon by deep level transient spectroscopy. Injection of phosphorus-vacancy pairs in silicon substrate; Observation of phosphorus-vacancy pairs after electron irradiation; Use of electron gun evaporation for low temperature vacancy injection in the surface.


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