TITLE

Point defect injection into silicon due to low-temperature surface modifications

AUTHOR(S)
Christensen, Carsten; Petersen, Jon Wulff
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1426
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the appearance of phosphorus-vacancy pairs in n-type silicon by deep level transient spectroscopy. Injection of phosphorus-vacancy pairs in silicon substrate; Observation of phosphorus-vacancy pairs after electron irradiation; Use of electron gun evaporation for low temperature vacancy injection in the surface.
ACCESSION #
4255005

 

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