TITLE

Growth rate suppression of InGaAs film grown by laser-assisted chemical beam epitaxy

AUTHOR(S)
Iga, Ryuzo; Sugiura, Hideo
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1423
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth rate suppression of indium gallium arsenide (InGaAs) by argon ion laser-assisted chemical beam epitaxy. Relationship between temperature and arsenic (As) atoms; Dependence of InGaAs growth rate on AsH[sub 3] flow rate; Effect of As evaporation on the growth rate suppression.
ACCESSION #
4255004

 

Related Articles

  • Atomic layer epitaxy of AlAs using ethyldimethylamine alane as a new aluminum source. Kano, Nobuo; Hirose, Shingo // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1115 

    Examines atomic layer epitaxy (ALE) of aluminum arsenide layers with supplies of ethyldimethylamine alane and arsine as sources. Observation of the self-limiting growth at either one- or two-monolayer per source supply cycle; Estimation of the carbon concentration in the resultant aluminum...

  • Heteroepitaxial ultrafine wire-like growth of InAs on GaAs substrates. Yazawa, M.; Koguchi, M.; Hiruma, K. // Applied Physics Letters;3/11/1991, Vol. 58 Issue 10, p1080 

    Examines the heteroepitaxial ultrafine wire-like growth indium arsenide on gallium arsenide substrates. Characterization of the epitaxial growth of the indium arsenide whiskers; Selectivity of growth; Effects of higher growth temperatures.

  • Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy. Jeppesen, Soren; Miller, Mark S. // Applied Physics Letters;4/15/1996, Vol. 68 Issue 16, p2228 

    Examines the manipulation of strained indium arsenide islands on patterned gallium arsenide (GaAs) substrates with chemical beam epitaxy. Pattern and location of island formation; Behavior of the islands during GaAs capping; Range of sizes and pitches in the periodic structures.

  • Nucleation and growth of Ag nanoparticles on amorphous carbon surface from vapor phase formed by vacuum evaporation. Gromov, Dmitry; Pavlova, Lydia; Savitsky, Andrey; Trifonov, Alexey // Applied Physics A: Materials Science & Processing;Mar2015, Vol. 118 Issue 4, p1297 

    We present the results of experimental study of Ag nanoparticle arrays on thin film of amorphous carbon. The arrays were formed by means of vapor phase deposition on non-heated substrate. The investigation was carried out using TEM technique. It has been found that the size of the particles and...

  • Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature. Tsang, W. T. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p742 

    Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with well-defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2–5 μm have been replicated. An experiment was also...

  • Very low current threshold GaAs/Al0.5Ga0.5As double-heterostructure lasers grown by chemical beam epitaxy. Tsang, W. T. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p511 

    The first device performance of GaAs/AlxGa1-xAs double-heterostructure lasers grown by chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities of ∼500 A/cm2 were obtained for wafers with active layer thicknesses of ∼500–1000 Å and confinement...

  • Self-limiting mechanism in the atomic layer epitaxy of GaAs. Tischler, M. A.; Bedair, S. M. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1681 

    A self-limiting mechanism has been observed in the atomic layer epitaxy (ALE) of GaAs deposited by alternate exposure to AsH3 and trimethylgallium (TMG). The thickness of the deposited film was found to be independent of the mole fractions of both TMG and AsH3 in the gas phase. These results...

  • Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si. Shastry, S. K.; Zemon, S. // Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p467 

    The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low-temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two-step process and without any high-temperature heat treatment of the Si...

  • Damage calculation and measurement for GaAs amorphized by Si implantation. Opyd, W. G.; Gibbons, J. F.; Bravman, J. C.; Parker, M. A. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p974 

    Extended defects in GaAs are investigated following epitaxial regrowth of amorphous layers. GaAs surface layers were amorphized by Si+ implants at liquid-nitrogen temperature. Anneals were performed for 4 s to 30 min from 150 to 885 °C. Rutherford backscattering spectrometry and transmission...

  • Growth of high-quality GaAs using trimethylgallium and diethylarsine. Bhat, R.; Koza, M. A.; Skromme, B. J. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1194 

    In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics