Growth rate suppression of InGaAs film grown by laser-assisted chemical beam epitaxy

Iga, Ryuzo; Sugiura, Hideo
September 1992
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1423
Academic Journal
Examines the growth rate suppression of indium gallium arsenide (InGaAs) by argon ion laser-assisted chemical beam epitaxy. Relationship between temperature and arsenic (As) atoms; Dependence of InGaAs growth rate on AsH[sub 3] flow rate; Effect of As evaporation on the growth rate suppression.


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