TITLE

Terahertz pulses from semiconductor-air interfaces

AUTHOR(S)
Pedersen, J.E.; Balslev, I.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1372
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates terahertz pulses radiated from semiconductor-air interfaces. Illumination of terahertz pulses by femtosecond laser pulses; Influence of the interface on the distribution of emitted radiation; Use of spherical lens to collect terahertz radiation.
ACCESSION #
4254985

 

Related Articles

  • Standard design for National Ignition Facility x-ray streak and framing cameras. Kimbrough, J. R.; Bell, P. M.; Bradley, D. K.; Holder, J. P.; Kalantar, D. K.; MacPhee, A. G.; Telford, S. // Review of Scientific Instruments;Oct2010, Vol. 81 Issue 10, p10E530 

    The x-ray streak camera and x-ray framing camera for the National Ignition Facility were redesigned to improve electromagnetic pulse hardening, protect high voltage circuits from pressure transients, and maximize the use of common parts and operational software. Both instruments use the same...

  • A neutron reflectometry study of the interface between poly(9,9-dioctylfluorene) and poly(methyl methacrylate). Higgins, A. M.; Jukes, P. C.; Martin, S. J.; Geoghegan, M.; Jones, R. A. L.; Cubitt, R. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4949 

    Neutron reflectivity was used to study the interface between the semiconducting polymer poly(9,9-dioctylfluorene) (PFO) and the insulating polymer poly(methyl methacrylate) (PMMA). The PFO/PMMA interfacial width was measured in the nematic and crystalline phases of the PFO, both with the PMMA on...

  • New method for separating and characterizing interface states and oxide traps on oxidized silicon. Sah, Chih-Tang; Lin, Wallace Wan-Li; Pan, Samuel Cheng-Sheng; Hsu, Charles Ching-Hsiang // Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p782 

    The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application...

  • Material reaction and silicide formation at the refractory metal/silicon interface. Rubloff, G. W.; Tromp, R. M.; van Loenen, E. J. // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1600 

    Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low-temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Ã… or more) of reaction of...

  • Chemical and electronic structure of InSb-CdTe interfaces. Mackey, K. J.; Allen, P. M. G.; Herrenden-Harker, W. G.; Williams, R. H.; Whitehouse, C. R.; Williams, G. M. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p354 

    The microscopic interactions at heterojunctions formed between cleaned surfaces of InSb and CdTe have been investigated by low-energy electron diffraction and soft x-ray photoelectron spectroscopy. Layers of CdTe have been deposited on 1×1 (110) cleaved InSb and on c(2×8) (100) sputter...

  • Interface traps and Pb centers in oxidized (100) silicon wafers. Gerardi, Gary J.; Poindexter, Edward H.; Caplan, Philip J.; Johnson, Noble M. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p348 

    The band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0, which has the structure ·Si≡Si3, and is essentially identical to the sole Pb...

  • Elimination of end-of-range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si. Ajmera, A. C.; Rozgonyi, G. A. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1269 

    The problems of residual extended defects due to end-of-range ion implantation damage and mask edge lateral damage have been solved in this study for shallow boron junctions preamorphized via germanium ion implantation. Defect elimination has been achieved by adjusting the germanium ion energy,...

  • Two distinct interface trap peaks in radiation-damaged metal/SiO2/Si structures. da Silva, Eronides F.; Nishioka, Yasushiro; Ma, T.-P. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p270 

    Two distinct peaks in the interface trap distribution on (100) Si, one above and the other below the Si midgap energy, have been observed in a wide selection of metal/SiO2/Si capacitors after they are exposed to ionizing radiation. The samples tested cover a wide range of gate electrode...

  • Si3N4-Si interface formation by catalytic nitridation using nitrogen exposures on alkali metal overlayers and removal of the catalyst: N2/Na/Si (100) 2×1. Soukiassian, P.; Gentle, T. M.; Schuette, K. P.; Bakshi, M. H.; Hurych, Z. // Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p346 

    Core level photoemission spectroscopy using synchrotron radiation was performed to study the activity of sodium on the nitridation of the (100) face of silicon. At room temperature, the exposition to molecular nitrogen of a Si (100) surface modified by a sodium monolayer induced the formation of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics