TITLE

Growth of InAs on EuBa[sub 2]Cu[sub 3]O[sub 7-y] superconducting thin films with SrF[sub 2]

AUTHOR(S)
Watanabe, Y.; Maeda, F.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p979
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the growth of indium arsenide (InAs) on EuBa[sub 2]Cu[sub 3]O[sub 7-y] (EBCO) superconducting thin films with SrF[sub 2] interlayers. Prevention of reactions at the interface; Effectiveness of SrF[sub 2] interlayers in suppressing the removal of oxygen from the EBCO surface; Crystallization of InAs.
ACCESSION #
4254976

 

Related Articles

  • Quantum size effects in Bi films grown on GaAs (110). Abu-Samak, Mahmoud // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123714 

    Photoemission results, obtained with a helium-discharge lamp on the Bi/GaAs(110) interface shows strong modifications in the electronic structure of the low temperature deposited Bi overlayer upon annealing to room temperature, accompanied by developing of a sharp low energy electron-diffraction...

  • In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by.... Heller, E.J.; Lagally, M.G. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2675 

    Investigates the surface morphology of molecular-beam-epitaxy grown in gallium arsenide(001). Growth of the film on flat substrates; Indication of a step energy anisotropy; Observation of a multilevel system of elongated terraces in the surface growth.

  • Interface structure and chemistry in ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe heterostructures. Lian, G. D.; Dickey, E. C.; Chun, S. H.; Ku, K. C.; Samarth, N. // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3656 

    The structure and chemical composition of ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe multilayers grown on (100) GaAs substrates are investigated by high-resolution transmission electron microscopy imaging and spectroscopy techniques. While all layers grow epitaxially and the Ga[sub 1-x]Mn[sub x]As layer...

  • Structural and magnetic properties of epitaxial (0001) MnSb thin films grown on (111) B GaAs.... Akinaga, H.; Miyanishi, S. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2472 

    Explores the structural and magnetic properties of manganese antimony thin films grown on (111) boron gallium arsenide. Attainment of a rough interdiffused interface; Observation of the in-plain strain in the films; Attribution of the flat interfaces to interdiffusion of antimony into substrate.

  • Study of the Co-Ge/GaAs contact system. Genut, M.; Eizenberg, M. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2146 

    Presents a study which observed the interfacial reactions between thin films of cobalt and germanium and (001)-oriented gallium arsenide substrates. Experimental details; Results of the study; Discussion of findings.

  • High resolution electron microscopy of crystalline-amorphous interface: An indication to Eden.... Lereah, Y.; Penisson, J.M. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1682 

    Examines the interface between crystalline and amorphous phases in crystallized Al:Ge amorphous thin films. Application of high resolution electron microscopy and nanoprobe analysis; Factors attributing to the shape of the growing phase during the crystallization process; Suitability of the...

  • N and Ar ion-implantation effects in SiO2 films on Si single-crystal substrates. Mazzoldi, P.; Carnera, A.; Caccavale, F.; Favaro, M. L.; Boscolo-Boscoletto, A.; Granozzi, G.; Bertoncello, R.; Battaglin, G. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3528 

    Studies the chemistry of an argon-ion-irradiated interface between an amorphous silicon dioxide film and a silicon single-crystal substrate. Chemical and physical properties involved in the formation of silicon oxynitrides in silica; Methods used to characterize the samples; Surface morphology...

  • Fermi level pinning-free interface at metals/homoepitaxial diamond (111) films after oxidation treatments. Sung-Gi Ri; Takeuchi, Daisuke; Tokuda, Norio; Okushi, Hideyo; Yamasaki, Satoshi // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p112112 

    Schottky barrier heights of metal (Al, Au, Ni, and Pt) contacts on boron (B)-doped (111) homoepitaxial diamond films are investigated as a function of surface oxidation treatments before metal deposition [after wet-chemical oxidation (WO), WO followed by annealing in Ar atmosphere (WO-AN) and...

  • Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B. Richardella, A.; Zhang, D. M.; Lee, J. S.; Koser, A.; Rench, D. W.; Yeats, A. L.; Buckley, B. B.; Awschalom, D. D.; Samarth, N. // Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p262104 

    We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics