Growth of InAs on EuBa[sub 2]Cu[sub 3]O[sub 7-y] superconducting thin films with SrF[sub 2]

Watanabe, Y.; Maeda, F.
August 1992
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p979
Academic Journal
Analyzes the growth of indium arsenide (InAs) on EuBa[sub 2]Cu[sub 3]O[sub 7-y] (EBCO) superconducting thin films with SrF[sub 2] interlayers. Prevention of reactions at the interface; Effectiveness of SrF[sub 2] interlayers in suppressing the removal of oxygen from the EBCO surface; Crystallization of InAs.


Related Articles

  • Quantum size effects in Bi films grown on GaAs (110). Abu-Samak, Mahmoud // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123714 

    Photoemission results, obtained with a helium-discharge lamp on the Bi/GaAs(110) interface shows strong modifications in the electronic structure of the low temperature deposited Bi overlayer upon annealing to room temperature, accompanied by developing of a sharp low energy electron-diffraction...

  • In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by.... Heller, E.J.; Lagally, M.G. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2675 

    Investigates the surface morphology of molecular-beam-epitaxy grown in gallium arsenide(001). Growth of the film on flat substrates; Indication of a step energy anisotropy; Observation of a multilevel system of elongated terraces in the surface growth.

  • Interface structure and chemistry in ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe heterostructures. Lian, G. D.; Dickey, E. C.; Chun, S. H.; Ku, K. C.; Samarth, N. // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3656 

    The structure and chemical composition of ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe multilayers grown on (100) GaAs substrates are investigated by high-resolution transmission electron microscopy imaging and spectroscopy techniques. While all layers grow epitaxially and the Ga[sub 1-x]Mn[sub x]As layer...

  • Structural and magnetic properties of epitaxial (0001) MnSb thin films grown on (111) B GaAs.... Akinaga, H.; Miyanishi, S. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2472 

    Explores the structural and magnetic properties of manganese antimony thin films grown on (111) boron gallium arsenide. Attainment of a rough interdiffused interface; Observation of the in-plain strain in the films; Attribution of the flat interfaces to interdiffusion of antimony into substrate.

  • Study of the Co-Ge/GaAs contact system. Genut, M.; Eizenberg, M. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2146 

    Presents a study which observed the interfacial reactions between thin films of cobalt and germanium and (001)-oriented gallium arsenide substrates. Experimental details; Results of the study; Discussion of findings.

  • High resolution electron microscopy of crystalline-amorphous interface: An indication to Eden.... Lereah, Y.; Penisson, J.M. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1682 

    Examines the interface between crystalline and amorphous phases in crystallized Al:Ge amorphous thin films. Application of high resolution electron microscopy and nanoprobe analysis; Factors attributing to the shape of the growing phase during the crystallization process; Suitability of the...

  • N and Ar ion-implantation effects in SiO2 films on Si single-crystal substrates. Mazzoldi, P.; Carnera, A.; Caccavale, F.; Favaro, M. L.; Boscolo-Boscoletto, A.; Granozzi, G.; Bertoncello, R.; Battaglin, G. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3528 

    Studies the chemistry of an argon-ion-irradiated interface between an amorphous silicon dioxide film and a silicon single-crystal substrate. Chemical and physical properties involved in the formation of silicon oxynitrides in silica; Methods used to characterize the samples; Surface morphology...

  • Fermi level pinning-free interface at metals/homoepitaxial diamond (111) films after oxidation treatments. Sung-Gi Ri; Takeuchi, Daisuke; Tokuda, Norio; Okushi, Hideyo; Yamasaki, Satoshi // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p112112 

    Schottky barrier heights of metal (Al, Au, Ni, and Pt) contacts on boron (B)-doped (111) homoepitaxial diamond films are investigated as a function of surface oxidation treatments before metal deposition [after wet-chemical oxidation (WO), WO followed by annealing in Ar atmosphere (WO-AN) and...

  • Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B. Richardella, A.; Zhang, D. M.; Lee, J. S.; Koser, A.; Rench, D. W.; Yeats, A. L.; Buckley, B. B.; Awschalom, D. D.; Samarth, N. // Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p262104 

    We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics