Rapid-thermal-oxidized porous Si--The superior photoluminescent Si

Petrova-Koch, V.; Muschik, T.
August 1992
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p943
Academic Journal
Evaluates the use of rapid-thermal oxidation to improve the stability of porous silicon prepared by electrochemical etching. Replacement of the hydride coverage of the internal surfaces of the pores; Retention of the nanometer-sized silicon grains; Effect of increasing process temperature.


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