TITLE

Metamorphic In[sub 0.3]Ga[sub 0.7]As/In[sub 0.29]AI[sub 0.71]As layer on GaAs: A new structure

AUTHOR(S)
Win, P.; Druelle, Y.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p922
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a high electron mobility transistor using In[sub 0.3]Ga[sub 0.7]As/In[sub 0.29]Al[sub 0.71]As layer on gallium arsenide (GaAs). Details on the electron transport properties of strained InGaAs and in GaAs; Advantages of the active layer with an indium content; Functions of the InGaAs buffer.
ACCESSION #
4254954

 

Related Articles

  • InGaAs/InP and InAsP/InP quantum well structures on GaAs(100) with a linearly graded InGaP.... Chin, T.P.; Hou, H.Q. // Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p2001 

    Examines the efficacy of linearly graded In[sub x]Ga[sub 1-x]P buffer layer in obtaining quality indium phosphide (InP) on GaAs(100). Advantages of a buffer layer; Use of compound transparency and linear grading in InP-based and GaAs-based device integration; Emphasis on dimensional growth mode...

  • High carrier lifetime InSb grown on GaAs substrates. Michel, E.; Mohseni, H.; Kim, J.D.; Wojkowski, J.; Sandven, J.; Xu, J.; Razeghi, M.; Bredthauer, R.; Vu, P.; Mitchel, W.; Ahoujja, M. // Applied Physics Letters;8/25/1997, Vol. 71 Issue 8, p1071 

    Examines high carrier lifetime indium antimonide grown on gallium arsenide substrates. Measurement of structural, electrical and optical properties; Determination of x-ray full widths at half-maximum; Calculation of peak mobilities.

  • Electron transport properties of a strained Si layer on a relaxed Si[sub 1-x]Ge[sub x] substrate.... Miyata, H.; Yamada, Toshishige; Ferry, D.K. // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2661 

    Examines the electron transport properties of silicon layer on silicon germanide substrate (SiGe). Use of band-gap engineering in Si/SiGe heterostructures; Achievement of high mobility in modulation-doped Si/SiGe; Action of SiGe substrate in electron gas.

  • As capture and the growth of ultrathin InAs layers on InP. Aspnes, D.E.; Tamargo, M.C. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3279 

    Investigates the capture of arsenic (As) and growth of ultrathin indium arsenide layers on indium phosphide (InP) surfaces. Stability of InP surfaces below 520 degree Celsius; Removal of accumulated As by exposure to phosphorus (P); Occurrence of As-P exchange in the outermost layer.

  • Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor. Eckel, M.; Ottenwalder, D. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p854 

    Investigates the properties of two indium precursors with respect to selectivity and variation of composition of selectively grown gallium indium arsenide layers. Use of metalorganic vapor phase epitaxy for structural growth on partially masked substrate; Differentiation between the two sources...

  • Influence of surface morphology on ordered GainP structures. Nasi, L.; Salviati, G.; Mazzer, M.; Zanotti-Fregonara, C. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3263 

    Investigates the influence of surface morphology on the distribution of ordered domains in GaInP layers. Increase in structural homogeneity of ordered domains; Correlation between cathodoluminescence emission from ordered regions; Changes in surface step distribution direction.

  • Conduction-band offset of single InAs monolayers on GaAs. Colombelli, Raffaele; Piazza, Vincenzo; Badolato, Antonio; Lazzarino, Marco; Beltram, Fabio; Schoenfeld, Winston; Petroff, Pierre // Applied Physics Letters;2/28/2000, Vol. 76 Issue 9 

    A determination of the InAs/GaAs band-offset energy is presented. Electronic-transport analysis, based on capacitance-voltage and deep-level transient spectroscopy techniques, demonstrates high crystalline quality of our sample and yields a band-offset estimate of 0.69 eV, corresponding to a...

  • Epitaxial growth of cadmium sulfide layers on indium phosphide from aqueous ammonia solutions. Lincot, Daniel; Ortega-Borges, Raul; Froment, Michel // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p569 

    Demonstrates the epitaxial growth of cadmium sulfide layers on indium phosphide monocrystals using chemical deposition from ammonia-thiourea aqueous solutions. Use of electron diffraction techniques to determine epitaxial relations; Link between temperature and epitaxy; Temperature range of...

  • Damage introduction in InP and InGaAs during Ar and H[sub 2] plasma exposure. Pearton, S.J.; Ren, F. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p586 

    Examines the sheet resistance of indium phosphide (InP) and In[sub 0.53]Ga[sub 0.47]As-doped epitaxial layers exposed to argon or hydrogen ion discharges. Detection of sheet resistance increase after plasma exposure; Dependence of the epitaxial layer sheet resistance on exposure time;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics