Metamorphic In[sub 0.3]Ga[sub 0.7]As/In[sub 0.29]AI[sub 0.71]As layer on GaAs: A new structure

Win, P.; Druelle, Y.
August 1992
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p922
Academic Journal
Presents a high electron mobility transistor using In[sub 0.3]Ga[sub 0.7]As/In[sub 0.29]Al[sub 0.71]As layer on gallium arsenide (GaAs). Details on the electron transport properties of strained InGaAs and in GaAs; Advantages of the active layer with an indium content; Functions of the InGaAs buffer.


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