TITLE

Epitaxial growth of (001) Al on (111) Si by vapor deposition

AUTHOR(S)
Thangaraj, N.; Westmacott, K.H.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p913
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the heteroepitaxial growth of (001) aluminum (Al) thin films on silicon (Si) (111) single crystal substrates by vapor deposition. List of the orientation variants of the (001) Al pattern; Quality of epitaxial alignment between Al (001) and Si (111); Structure of the Al/Si interface.
ACCESSION #
4254951

 

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