Composition change of SiC[sub x] (X=1-2) films due to variation of film precursors in the

Lu-Sheng Hong; Shimogaki, Yukihiro
August 1992
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p910
Academic Journal
Investigates the composition change of silicon carbide films due to variation of film precursors in the Si[sub 2]H[sub 6]/C[sub 2]C[sub 2] chemical vapor deposition (CVD) reaction system. Preparation of the films; Advantages of using the CVD; Mechanism governing the film composition.


Related Articles

  • Superconducting MgB[sub 2] thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition. Zeng, X. H.; Pogrebnyakov, A. V.; Zhu, M. H.; Jones, J. E.; Xi, X. X.; Xu, S. Y.; Wertz, E.; Li, Qi; Redwing, J. M.; Lettieri, J.; Vaithyanathan, V.; Schlom, D. G.; Liu, Zi-Kui; Trithaveesak, O.; Schubert, J. // Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2097 

    We have used two polytypes of silicon carbide single crystals, 4H-SiC and 6H-SiC, as the substrates for MgB[SUB2] thin films grown by hybrid physical-chemical vapor deposition (HPCVD). The c-cut surface of both polytypes has a hexagonal lattice that matches closely with that of MgB[SUB2]....

  • Uniform beta-SiC thin film growth on Si by low pressure rapid thermal chemical vapor deposition. Steckl, A.J.; Li, J.P. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2107 

    Investigates the uniform beta-silicon carbide thin film growth on silicon by low pressure rapid thermal chemical vapor deposition (LP-RTCVD). Value of the LP-RTCVD; Components of the growth process; Effect of pressure reduction on the growth rate; Factors responsible for the low standard...

  • Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films. Kim, H. J.; Davis, R. F. // Journal of Applied Physics;10/15/1986, Vol. 60 Issue 8, p2897 

    Studies the effects of silicon (Si)/(Si+carbon (C)) ratio in reaction gas stream on the growth and properties of monocrystalline Î’-SiC films grown on Si (100) substrates via chemical vapor deposition. Method used to eliminate the subsurface damage caused by polishing; Dependence of growth...

  • Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates. Kong, H. S.; Glass, J. T.; Davis, R. F. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2672 

    Presents a characterization of silicon carbide (SiC) thin films on off-axis 6H-SiC substrates which were prepared through chemical vapor deposition. Properties of SiC; Overview of previous studies on SiC thin films; Details of the experimental techniques used.

  • Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substrates. Holm, R. T.; Klein, P. H.; Nordquist, P. E. R. // Journal of Applied Physics;8/15/1986, Vol. 60 Issue 4, p1479 

    Presents information on a study that evaluated cubic SiC films grown by chemical vapor deposition on silicon substrates. Brief summary of the materials preparation; Calculation of infrared spectra for ideal SiC, in semi-infinite, thick-film, and thin-film forms; Calculation of spectra for films...

  • Deposition of polycrystalline beta-SiC films on Si substrates at room temperature. Kuan-Lun Cheng; Huang-Chung Cheng // Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p223 

    Examines the deposition of polycrystalline beta-silicon carbide films on silicon substrates at room temperature by electron cyclotron resonance chemical vapor deposition. Parameters used to lower deposition temperature; Determination of grain size and plasma-induced defects; Suppression of...

  • Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via.... Kawarada, H.; Suesada, T. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p583 

    Examines the heteroepitaxial growth of diamond thin films on silicon substrates using silicon carbide (SiC) buffer layers. Steps of epitaxial growth; Use of microwave plasma chemical vapor deposition; Importance of high quality SiC surfaces for oriented diamond nucleation.

  • Chemical vapor deposition of silicon carbide thin films on titanium carbide, using 1,3.... Chaddha, A.K.; Parsons, J.D.; Wu, J.; Chen, H-S.; Roberts, D.A.; Hockenhull, H. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3097 

    Examines the chemical vapor deposited (CVD)-silicon carbide thin films on titanium carbide substrates using 1,3 disilacyclobutane pyrolysis. Use of an inverted-vertical cold-wall CVD reactor; Analysis of film crystallinity as a function of substrate temperature; Relation between growth rate and...

  • Structural characterization of nanometer SiC films grown on Si. Li, J.P.; Steckl, A.J.; Golecki, I.; Reidinger, F.; Wang, L.; Ning, X.J.; Pirouz, P. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3135 

    Presents the structural characterization of ultrathin silicon carbide (SiC) by rapid thermal chemical vapor deposition carbonization. Use of x-ray and electron diffraction techniques; Alignment of SiC planes; Application of the Fourier transform infrared spectrum.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics