TITLE

Composition change of SiC[sub x] (X=1-2) films due to variation of film precursors in the

AUTHOR(S)
Lu-Sheng Hong; Shimogaki, Yukihiro
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the composition change of silicon carbide films due to variation of film precursors in the Si[sub 2]H[sub 6]/C[sub 2]C[sub 2] chemical vapor deposition (CVD) reaction system. Preparation of the films; Advantages of using the CVD; Mechanism governing the film composition.
ACCESSION #
4254950

 

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