TITLE

Observation of interstitial carbon in heavily carbon-doped GaAs

AUTHOR(S)
Hofler, G.E.; Hsieh, K.C.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p327
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the direct observation of interstitial carbon in heavily carbon-doped gallium arsenide. Determination of the carbon lattice location through nuclear reaction analysis; Occupation of carbon atoms in the crystal channel interstitial sites; Impact of carbon incorporation on bipolar transistor device performance.
ACCESSION #
4254921

 

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