Observation of interstitial carbon in heavily carbon-doped GaAs

Hofler, G.E.; Hsieh, K.C.
July 1992
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p327
Academic Journal
Examines the direct observation of interstitial carbon in heavily carbon-doped gallium arsenide. Determination of the carbon lattice location through nuclear reaction analysis; Occupation of carbon atoms in the crystal channel interstitial sites; Impact of carbon incorporation on bipolar transistor device performance.


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