Strained-layer InGaAs quantum well lasers emitting at 1.5 mum grown by chemical beam epitaxy

Sugiura, Hideo; Noguchi, Yoshio
July 1992
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p318
Academic Journal
Examines the laser characteristics of double channel planar buried heterostructures lasers in In[sub x]Ga[sub 1-x]As/InGaAsp multiquantum wells. Difference in the minority carrier lifetime of the unstrained and strained multiquantum wells; Measurement of the threshold current of the lasers; Increase in the resonance oscillation frequency.


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