Use of electron-beam charging for in-process inspection of silicide complementary

Jenkins, K.A.; Agnello, P.D.
July 1992
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p312
Academic Journal
Demonstrates the inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging. Verification on the isolation of the gate electrodes used in the circuits; Nonremoval of the wafers from the clean room; Deposition of the insulating dielectrics and subsequent metal to silicide bridge.


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