TITLE

Interface states in regrown GaAs p-n junctions by selective molecular beam epitaxy

AUTHOR(S)
Ikossi-Anastasiou, K.; Johnstone, D.K.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p297
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Evaluates the interface states present in gallium arsenide p-n junctions regrown on a silicon dioxide masked substrates. Examination of the selective molecular beam epitaxy samples; Fabrication of high density integrated circuits; Spatial localization of the interface states in crystalline semiconductors.
ACCESSION #
4254911

 

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