Control of GaAs Schottky barrier height by formation of a thin off-stoichiometric GaAs

Fujieda, Shinji
July 1992
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p288
Academic Journal
Presents an application of low-temperature gallium arsenide (GaAs) as a thin interface layer in a metal/GaAs Schottky junctions. Influence of surface nonstoichiometry on Schottky barrier heights; Exploration of molecular beam epitaxy growth in a wide range of arsenide pressure; Explanation of the wide variation of barrier heights.


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