TITLE

Epitaxial growth of an Al/CaF[sub 2]/Al/Si(111) structure

AUTHOR(S)
Cho, C.-C.; Liu, H.-Y.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p270
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the epitaxial growth of CaF[sub 2] semiconductor film on single crystal aluminum(111) on silicon(111). Fabrication of the epitaxial structure; Exhibition of crystalline orientations; Achievement of clean silicon(111) surfaces; Use of aluminum as conductor material in three-dimensional device integration.
ACCESSION #
4254902

 

Related Articles

  • Growth of high-quality 3C-SiC epitaxial films on off-axis Si(001) substrates at 850 degree C by.... Wahab, Q.; Sardela Jr., M.R. // Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p725 

    Analyzes the growth of 3 carbon-silicon carbide (3C-SiC) epitaxial films on off-axis silicon substrates by reactive magnetron sputtering. Comparison of the film quality to chemical vapor deposited 3C-SiC; Lattice mismatch and difference in thermal contraction between SiC and Si; Structural...

  • Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process. Ohmi, T.; Ichikawa, T.; Shibata, T.; Iwabuchi, H. // Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p523 

    Formation of high quality epitaxial silicon films at 350 °C by a low kinetic energy particle process has been verified by a series of crystal structure analyses performed on these films. It was found that the crystallinity of a grown film is drastically changed by the energy of Ar ions...

  • Improvements in the heteroepitaxy of GaAs on Si. Lum, R. M.; Klingert, J. K.; Davidson, B. A.; Lamont, M. G. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p36 

    Successful application of GaAs on Si heteroepitaxy to majority-carrier device fabrication has recently been demonstrated. However, the quality of the GaAs heteroepitaxial films is considerably below that routinely achieved for films grown on GaAs substrates. We have investigated the initial...

  • New hydride vapor phase epitaxy for GaP growth on Si. Mori, H.; Ogasawara, M.; Yamamoto, M.; Tachikawa, M. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1245 

    Gallium phosphide films are successfully grown on (100) Si substrates by a new hydride vapor phase epitaxy. Mixing of reactant vapors just above the substrate makes the growth rate as high as 50 nm/min even in the temperature range of 350–450 °C. This makes the two-step growth...

  • Silicon epitaxial solar cell with 663-mV open-circuit voltage. Blakers, A.W.; Werner, J.H. // Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2752 

    Investigates silicon (Si) films grown epitaxially on Si substrates using liquid-phase epitaxy. Evidence on open-circuit voltages displayed by fabricated solar cells; Consideration for high open-circuit voltages as a prerequisite for thin-film solar cells with high efficiencies; Implication for...

  • Homoepitaxial films grown on Si (100) at 150 °C by remote plasma-enhanced chemical vapor deposition. Breaux, L.; Anthony, B.; Hsu, T.; Banerjee, S.; Tasch, A. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1885 

    Low-temperature silicon epitaxy is critical for future generation ultralarge scale integrated circuits and silicon-based heterostructures. Remote plasma-enhanced chemical vapor deposition has been applied to achieve silicon homoepitaxy at temperatures as low as 150 °C, which is believed to be...

  • Initial domain structure of hydride vapor phase epitaxy GaAs/Si(001) by using x-ray standing waves. Kawamura, Tomoaki; Takenaka, Hisataka // Applied Physics Letters;4/1/1996, Vol. 68 Issue 14, p1969 

    Investigates the initial domain structure of hydride vapor epitaxy grown gallium arsenide (GaAs) films on silicon (Si)(001). Characterization of GaAs/Si sample interface by high-resolution transmission micrography; Impact of horizontal compression on the vertical expansion of GaAs; Decrease in...

  • Pinhole formation in solid phase epitaxial film of CoSi[sub 2] on Si(111). Ruan, Like; Chen, D. M. // Applied Physics Letters;6/29/1998, Vol. 72 Issue 26 

    The long-standing pinhole problem in solid phase epitaxial growth of a CoSi[sub 2] film on Si(111) has been revisited with in situ scanning tunneling microscopy. While the as-deposited film with 5 Ã… of Co at room temperature shows a smooth granular texture with original substrate terraces...

  • Compositionally-tuned epitaxial cubic Mg[sub x]Zn[sub 1-x]O on Si(100) for deep ultraviolet photodetectors. Yang, W.; Hullavarad, S. S.; Nagaraj, B.; Takeuchi, I.; Sharma, R. P.; Venkatesan, T.; Vispute, R. D.; Shen, H. // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3424 

    We report on the epitaxial growth of wide-band-gap cubic-phase Mg[sub x]Zn[sub 1 - x]O thin films on Si(100) by pulsed-laser deposition and fabrication of oxide-semiconductor-based ultraviolet photodetectors. The challenges of large lattice and thermal expansion mismatch between Si and Mg[sub...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics