TITLE

New method for epitaxial heterostructure layer growth

AUTHOR(S)
Mantl, Siegfried; Bay, Helge L.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p267
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the fabrication of compound thin films inside single-crystalline matrices. Formation of a peaked depth distribution of AB[sub x] precipitates; Coalescence of the precipitates; Growth of buried epitaxial CoSi[sub 2] layers in silicon(100); Simultaneous epitaxial growth of the matrix and precipitates.
ACCESSION #
4254900

 

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