Very high efficiency GaInAsP/GaAs strained-layer quantum well lasers (lambda=980 nm) with

Groves, S.H.; Walpole, J.N.
July 1992
Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p255
Academic Journal
Demonstrates an increase in the differential quantum efficiency of strained-layer quantum well lasers using a GaInAsP alloy. Effective internal cavity loss in the structures; Growth of the confinement layers; Improvement of crystal quality and device performance; Application of GaINAsP/GaAs-based devices for pumping Erbium-doped fiber amplifiers.


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