Si and N dangling bond creation in silicon nitride thin films

Warren, W.L.; Robertson, J.
November 1993
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2685
Academic Journal
Examines the simultaneous creation of paramagnetic silicon (Si) and nitrogen (N) dangling bonds in N-rich silicon nitride thin films. Information on the Si dangling bond in room temperature illumination; Presentation of N dangling bond at high temperature post deposition anneal; Effect of low temperature illumination on the dangling bonds.


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