TITLE

Si and N dangling bond creation in silicon nitride thin films

AUTHOR(S)
Warren, W.L.; Robertson, J.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2685
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the simultaneous creation of paramagnetic silicon (Si) and nitrogen (N) dangling bonds in N-rich silicon nitride thin films. Information on the Si dangling bond in room temperature illumination; Presentation of N dangling bond at high temperature post deposition anneal; Effect of low temperature illumination on the dangling bonds.
ACCESSION #
4250723

 

Related Articles

  • Characterization of Titanium films for low temperature detectors. Monticone, E.; Rajteri, M.; Rastello, M. L.; Lacquaniti, V.; Gandini, C.; Pasca, E.; Ventura, G. // AIP Conference Proceedings;2002, Vol. 605 Issue 1, p181 

    In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is...

  • Charge trapping centers in N-rich silicon nitride thin films. Warren, W.L.; Kanicki, J. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p216 

    Investigates charge trapping centers in nitrogen-rich silicon nitride thin films. Examination of the effects of multiple electron and hole injections; Rise of the initial spin density in the nitride; Support of the study to the negative-U premises.

  • Properties of plasma-enhanced chemical-vapor-deposited a-SiNx:H by various dilution gases. Hsieh, S. W.; Chang, C. Y.; Lee, Y. S.; Lin, C. W.; Hsu, S. C. // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3645 

    Presents information on a study which investigated the effects of dilution gases on hydrogenated amorphous silicon nitride films. Effects of gas dilution on the deposition and physical properties of the films; Experimental details; Results and discussion; Conclusions.

  • Deposition chemistry and structure of plasma-deposited silicon nitride films from 1,1,3,3,5,5-hexamethylcyclotrisilazane. Brooks, T. A.; Hess, D. W. // Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p841 

    Presents information on a study which described the deposition chemistry of silicon nitride films with 1,1,3,3,5,5-hexamethylcyclotrisilazane. Film deposition; Experimental details; Results and discussion; Conclusion.

  • Incorporation of nitrogen in Si3N4-capped silicon by cw Ar+-laser melting. Willems, G. J.; Maes, H. E. // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, p5185 

    Presents a study of the mechanisms that determine the incorporation of nitrogen in silicon-nitrogen-capped silicon by carrier wave argon[sup+]-laser melting. Discussion on the incorporation of impurities such as oxygen, nitrogen and carbon; Role of nitrogen in zone-melting recrystallization of...

  • Photobleaching of light-induced paramagnetic defects in amorphous silicon nitride films. Crowder, M. S.; Tober, E. D.; Kanicki, J. // Applied Physics Letters;11/5/1990, Vol. 57 Issue 19, p1995 

    We report for the first time the photobleaching of light-induced paramagnetic defects in nitrogen-rich hydrogenated amorphous-silicon nitride thin films. We have determined the photon energy dependence and the stretched exponential time dependence for photoproduction and the subsequent...

  • Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors. van Berkel, C.; Powell, M. J. // Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1094 

    Bias stress measurements on amorphous silicon-silicon nitride ambipolar thin-film transistors give clear evidence for the co-existence of two distinct instability mechanisms: the metastable creation of states in the a-Si:H layer and charge trapping in the a-SiN:H layer. The creation of...

  • Green photoluminescence from Er-containing amorphous SiN thin films. Zanatta, A. R.; Nunes, L. A. O. // Applied Physics Letters;6/15/1998, Vol. 72 Issue 24 

    Green light emission at room temperature was achieved from nonhydrogenated amorphous silicon–nitrogen (a-SiN) thin films. The films were deposited by cosputtering a silicon target covered with metallic erbium platelets in an Ar+N[sub 2] atmosphere. According to the deposition conditions,...

  • Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films... Chaiyasena, I.A.; Lenahan, P.M.; Dunn, G.J. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2141 

    Reports on the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Preparation of nitrided oxide films; Electron spin resonance measurements made; Effect of sample exposure to vacuum ultraviolet (VUV) light; Capacitance versus...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics