TITLE

Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of

AUTHOR(S)
Seongil Im; Washburn, Jack
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2682
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optimization of germanium/carbon (Ge/C) ratio compensation of misfit strain in solid phase epitaxial (SPE) growth of silicon germanide (SiGe) layers. Reduction of misfit dislocations and stacking faults in SPE grown SiGe alloy layers; Existence of strain compensation effect in Ge/C ratio; Discussion on the spatial distributions of Ge and C.
ACCESSION #
4250722

 

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