TITLE

Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy

AUTHOR(S)
Hacke, P.; Detchprohm, T.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2676
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the Schottky barrier on n-type gallium nitride grown by hydride vapor phase epitaxy. Production of good quality diodes; Discussion on the barrier height and built-in potential of the junction and electron affinity and ionized donor concentration of gallium nitride; Implications of the ideality factor for the current flow.
ACCESSION #
4250720

 

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