TITLE

Optoelectronic applications of porous polycrystalline silicon

AUTHOR(S)
Kalkhoran, Nader M.; Namavar, Fereydoon
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2661
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optoelectronic applications of porous polycrystalline silicon. Formation of visible light emission from porous structures in bulk and thin-film polycrystalline silicon materials; Indication of photoluminescence wavelength peaks and intensities; Implication of the surface morphology analyses for the etch rate.
ACCESSION #
4250715

 

Related Articles

  • Hall mobility of charge carriers in films of (PbX)1-x(Sm2x3)x semiconductors formed on porous silicon. Hasanov, H. A.; Murguzov, M. I. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2008, Vol. 11 Issue 4, p356 

    Presented paper is devoted to studying the methods to prepare epitaxial films of (PbX)1-x (Sm2X3)x (X - S, Se, Te; x = 0.04) semiconductors and to examine the Hall mobility of charge carriers in these films. It is revealed that the derived dependences �H (T) for the samples on values of the...

  • Quantum phase slips in superconducting Nb nanowire networks deposited on self-assembled Si templates. Cirillo, C.; Trezza, M.; Chiarella, F.; Vecchione, A.; Bondarenko, V. P.; Prischepa, S. L.; Attanasio, C. // Applied Physics Letters;10/22/2012, Vol. 101 Issue 17, p172601 

    Robust porous silicon substrates were employed for generating interconnected networks of superconducting ultrathin Nb nanowires. Scanning electron microscopy analysis was performed to investigate the morphology of the samples, which constitute of polycrystalline single wires with grain size of...

  • Growth kinetics of amorphous interlayers and formation of crystalline silicide phases in... Luo, C.H.; Chen, L.J. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3808 

    Investigates the growth kinetics of amorphous interlayer and formation of crystalline silicide phases in ultrahigh vacuum deposited polycrystalline Er and Tb films on Si. Growth of the amorphous interlayer in both Er/Si and Tb/Si systems; Measurement of energy of the linear growth and maximum...

  • Cd self-doping of CdTe polycrystalline films by co-sputtering of CdTe-Cd targets. Picos-Vega, A.; Becerril, M.; Zelaya-Angel, O.; Ramírez-Bon, R.; Espinoza-beltrán, F. J.; González-Hernández, J.; Jiménez-Sandoval, S.; Chao, B. // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p760 

    Studies the growth of Cd self-doping of CdTe polycrystalline films by co-sputtering of CdTe-Cd targets. Information in CdTe; Details on the experiment used in this study; Results of and discussion on the experiment.

  • Porous silicon: From luminescence to LEDs. Collins, Reuben T.; Fauchet, Philippe M. // Physics Today;Jan97, Vol. 50 Issue 1, p24 

    Highlights the development of a technology that would permit optical, and electronic devices to be easily and inexpensively integrated on a silicon wafer. Benefits of this advance on display, communications, computer, and other related technologies; Importance of putting light-emitting diodes...

  • Electrical conductance simulation of two-dimensional directional site percolated networks for... Yeh, Everett C.-C.; Hsu, Klaus Y.-J. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p326 

    Presents information on the modeling of two-dimensional porous silicon structures, as two-dimensional directional site percolated networks (2D-DSPNs). Information on the 2D-DSPNs models; Identification of the effects of porosity and geometrical connection on the electrical conduction behavior.

  • Erbium-doped porous silicon luminesces at 1.54 microns.  // Laser Focus World;Jul94, Vol. 30 Issue 7, p13 

    Reports on the development of an erbium-implanted porous silicon structure by scientists at Spire Corp. that has an electrically activated emission of 1.54 microns at room temperature. Advantages over conventional silicons; Luminescence peak; Temperature stability.

  • Photoeffect in porous silicon. Hlavka, Jan // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1404 

    Reports on the measurement of the photoeffect in porous silicon. Origin of the photoeffect; Photoeffect spectral dependencies; Time relaxation.

  • Silicon's future gets brighter.  // R&D Magazine;Apr98, Vol. 40 Issue 5, p11 

    Reports on the development of a process to stabilize the surface of porous silicon. What is porous silicon.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics