Visible electroluminescence from porous silicon diodes with an electropolymerized contact

Koshida, Nobuyoshi; Koyama, Hideki
November 1993
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2655
Academic Journal
Examines an electrochemical technique to form a solid-state electrical contact of porous silicon (PS) electroluminescence (EL) diodes. Creation of PS layers; Comparison between PS-EL diode and current-voltage characteristics of the EL intensity; Usefulness of electrode impregnation into PS for EL an operation.


Related Articles

  • Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices. Oguro, Tsuyoshi; Koyama, Hideki // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1407 

    Studies the excitation and radiative recombination mechanisms of carriers in electroluminescent (EL) porous silicon in devices with the structure of Au/PS/n-type silicon. Fundamental characteristics at room temperature; Temperature dependence; Excitation wavelength dependence of the PL...

  • The frequency response of porous silicon electroluminescent devices. Peng, C.; Fauchet, P.M. // Applied Physics Letters;10/23/1995, Vol. 67 Issue 17, p2515 

    Examines the influence of device structure on the efficiency and frequency response of porous silicon electroluminescence (EL). Analysis on the recombination dynamics of EL; Correlation between the EL efficiency and the properties of light-emitting porous silicon (LEPSi); Fabrication of LEPSi...

  • A model of radiative recombination in n-type porous silicon-aluminum Schottky junction. Balucani, M.; Bondarenko, V.; Franchina, L.; Lamedica, G.; Yakovtseva, V.A.; Ferrari, A. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p1960 

    Details an in-depth analysis of data for light emitting devices based on porous silicon. Silicon's emission of visible light in its breakdown condition; Low efficiency; Theoretical model of luminescence from reverse biased p-n junction for the n-type porous silicon-aluminum Schottky junction.

  • Tunable, narrow, and enhanced electroluminescent emission from porous-silicon-reflector-based organic microcavities. Qiu, X. J.; Tan, X. W.; Wang, Z.; Liu, G. Y.; Xiong, Z. H. // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p074503 

    Microcavity organic light-emitting diodes (MC-OLEDs) based on porous silicon distributed Bragg reflectors (PS-DBRs) have been realized, and improved structural, optical, and electrical properties have been observed. In the device, a multilayer OLED functions as the central active element,...

  • Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon. Severiano, F.; García, G.; Castañeda, L.; Gracia-Jiménez, J. M.; Gómez-Pozos, Heberto; Luna-López, J. A. // Journal of Nanomaterials;2014, p1 

    Electroluminescent devices (ELD) based on junctions of indium doped zinc oxide (ZnO:In) and porous silicon layers (PSL) are presented in this work. PSL with different thicknesses and photoluminescent emission, around 680 nm, were obtained by anodic etching. PSL were coated with a ZnO:In film...

  • Porous silicon: From luminescence to LEDs. Collins, Reuben T.; Fauchet, Philippe M. // Physics Today;Jan97, Vol. 50 Issue 1, p24 

    Highlights the development of a technology that would permit optical, and electronic devices to be easily and inexpensively integrated on a silicon wafer. Benefits of this advance on display, communications, computer, and other related technologies; Importance of putting light-emitting diodes...

  • Electrical conductance simulation of two-dimensional directional site percolated networks for... Yeh, Everett C.-C.; Hsu, Klaus Y.-J. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p326 

    Presents information on the modeling of two-dimensional porous silicon structures, as two-dimensional directional site percolated networks (2D-DSPNs). Information on the 2D-DSPNs models; Identification of the effects of porosity and geometrical connection on the electrical conduction behavior.

  • Erbium-doped porous silicon luminesces at 1.54 microns.  // Laser Focus World;Jul94, Vol. 30 Issue 7, p13 

    Reports on the development of an erbium-implanted porous silicon structure by scientists at Spire Corp. that has an electrically activated emission of 1.54 microns at room temperature. Advantages over conventional silicons; Luminescence peak; Temperature stability.

  • Photoeffect in porous silicon. Hlavka, Jan // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1404 

    Reports on the measurement of the photoeffect in porous silicon. Origin of the photoeffect; Photoeffect spectral dependencies; Time relaxation.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics