Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different

Danilin, A.B.; Nemirovski, A.W.
November 1993
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2647
Academic Journal
Examines the impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions. Influence of dose rate on the defectivity degree of nitrogen-implanted silicon; Effect of photoexcitation on the concentration of interstitial-type defects; Description of in situ photoexcitation method.


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