TITLE

Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different

AUTHOR(S)
Danilin, A.B.; Nemirovski, A.W.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2647
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions. Influence of dose rate on the defectivity degree of nitrogen-implanted silicon; Effect of photoexcitation on the concentration of interstitial-type defects; Description of in situ photoexcitation method.
ACCESSION #
4250710

 

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