4H-SiC/6H-SiC interface structures studied by high-resolution transmission electron microscopy

Iwasaki, Hiroshi; Inoue, Shinji
November 1993
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2636
Academic Journal
Examines the interface structure of 4H-SiC/6H-SiC heterostructures formed in monocrystalline bulk silicon carbide. Discussion on the transition of 6H-SiC to 4H-SiC; Determination of atomic stacking sequence at the interface of the polytype crystals; Benefits of the samples grown on the carbon face of a 6H-SiC seed with in situ cesium doping.


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