TITLE

4H-SiC/6H-SiC interface structures studied by high-resolution transmission electron microscopy

AUTHOR(S)
Iwasaki, Hiroshi; Inoue, Shinji
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2636
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interface structure of 4H-SiC/6H-SiC heterostructures formed in monocrystalline bulk silicon carbide. Discussion on the transition of 6H-SiC to 4H-SiC; Determination of atomic stacking sequence at the interface of the polytype crystals; Benefits of the samples grown on the carbon face of a 6H-SiC seed with in situ cesium doping.
ACCESSION #
4250706

 

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