TITLE

Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA

AUTHOR(S)
Chen, T.R.; Eng, L.E.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2621
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the strained single quantum well indium gallium arsenide (InGaAs) lasers with a threshold current of 0.25 milliamperes. Comparison between InGaAs/aluminum GaAs laser and single quantum well lasers; Dependence of the threshold current on cavity length; Description of the fabrication process for low threshold lasers.
ACCESSION #
4250701

 

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