TITLE

Damage saturation during high-energy ion implantation of Si[sub 1 - x]Ge[sub x]

AUTHOR(S)
Holland, O.W.; Haynes, T.E.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3148
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the correlation between damage saturation and temperature during (Si) ion implantation of silicon germanide alloys. Effect of lattice defects on Si damage saturation; Nucleation of damage saturation during ion irradiation; Occurrence of damage saturation by nucleation.
ACCESSION #
4250675

 

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