Damage saturation during high-energy ion implantation of Si[sub 1 - x]Ge[sub x]

Holland, O.W.; Haynes, T.E.
December 1992
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3148
Academic Journal
Investigates the correlation between damage saturation and temperature during (Si) ion implantation of silicon germanide alloys. Effect of lattice defects on Si damage saturation; Nucleation of damage saturation during ion irradiation; Occurrence of damage saturation by nucleation.


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