TITLE

Single-electron effects in a point contact using side-gating in delta-doped layers

AUTHOR(S)
Nakazato, Kazuo; Thornton, Trevor J.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3145
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the side-gates point-contact structures in delta-doped layers to form tunnel junctions. Effect of Coulomb-blockade on gallium arsenide/ aluminum gallium arsenide heterointerface; Estimation of tunnel and side-gate capacitance; Observation of current-voltage curves in Coulomb-blockage effects.
ACCESSION #
4250674

 

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