TITLE

Distribution of Ge in O[sup +] implanted silicon

AUTHOR(S)
Twigg, M.E.; Zvanut, M.E.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3142
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the distribution of germanium in silicon germanide (SiGe) structures after oxygen implantation. Embedment of SiGe layers in silicon; Distribution of Ge in the implanted oxide layer; Effect of Ge diffusion on Si.
ACCESSION #
4250673

 

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