Distribution of Ge in O[sup +] implanted silicon

Twigg, M.E.; Zvanut, M.E.
December 1992
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3142
Academic Journal
Examines the distribution of germanium in silicon germanide (SiGe) structures after oxygen implantation. Embedment of SiGe layers in silicon; Distribution of Ge in the implanted oxide layer; Effect of Ge diffusion on Si.


Related Articles

  • Medium energy ion implantation of germanium into heated <100> silicon. Tissot, P.E.; McCoy, J.C. // Applied Physics Letters;2/20/1995, Vol. 66 Issue 8, p979 

    Investigates the germanium silicon layers implanted with germanium peak concentration at different energies using potential of the heated implant technique. Characteristic of better quality layers of room temperature implants; Investigation of final crystalline quality of annealed layers;...

  • Room-temperature vacancy migration in crystalline Si from a ion-implanted surface layer. Larsen, Arne Nylandsted; Christensen, Carsten // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p4861 

    Presents information on a study which demonstrated the migration of vacancies in crystalline silicon from germanium-implanted surface layers. Experimental procedure; Results and discussion; Conclusions.

  • Solid phase epitaxial regrowth of Si1-xGex/Si strained-layer structures amorphized by ion implantation. Chilton, B. T.; Robinson, B. J.; Thompson, D. A.; Jackman, T. E.; Baribeau, J.-M. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p42 

    Strained-layer structures consisting of ∼30–35 nm Si1-xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+...

  • Removal of end-of-range defects in Ge...-pre-amophized Si by carbon ion implantation. Chen, Peng-Shiu; Hsieh, T.E. // Journal of Applied Physics;3/15/1999, Vol. 85 Issue 6, p3114 

    Provides information on a study which described the removal of end-of-range (EOR) defects by carbon ion implantation in germanium (Ge)-pre-amorphized silicon. Description of the Ge-implanted specimens; Ge and carbon specimens; Effects of temperature on the removal.

  • Arsenic influence on extended defects produced in silicon by ion implantation. Coffa, S.; Calcagno, L.; Catania, M.; Rimini, E. // Applied Physics Letters;6/11/1990, Vol. 56 Issue 24, p2405 

    Ge ions at 400 keV were implanted on <100> undoped silicon and on arsenic-doped silicon wafers maintained at 250 °C. The arsenic concentration ranged between 1.0×1019 and 1.0×1020 atom/cm3. The residual damage is mainly in the form of dislocation loops as measured by channeling and...

  • The effect of ion implantation and solute atoms on the interdiffusion in amorphous Si/Ge multilayers. Park, B.; Spaepen, F.; Poate, J. M.; Jacobson, D. C. // Journal of Applied Physics;5/1/1991, Vol. 69 Issue 9, p6430 

    Presents a study that investigated the effect of ion implantation and solute atoms on the interdiffusion in amorphous silicon/germanium multilayers. Diffusivities of other solutes such as platinum and bismuth; Investigation of the samples before and after ion implantation or thermal annealing;...

  • Observation of an enhanced gettering effect in silicon under germanium molecular ion implantation. David, C.; Sundaravel, B.; Ravindran, T. R.; Nair, K. G.M.; Panigrahi, B. K.; Lenka, H. P.; Joseph, B.; Mahapatra, D. P. // Applied Physics A: Materials Science & Processing;Aug2007, Vol. 88 Issue 2, p397 

    Germanium atomic (Ge1+) and molecular ions (Ge2+) of equal energy per atom are implanted in silicon at an elevated temperature. The ion induced damage has been monitored by following the intensity variation of the LO Raman peak of Si. The germanium implanted samples have been labeled with 10 keV...

  • Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer. Tyschenko, I. E.; Voelskow, M.; Cherkov, A. G.; Popov, V. P. // Semiconductors;Jan2009, Vol. 43 Issue 1, p52 

    Systematic features of endotaxial growth of intermediate germanium layers at the bonding interface in the silicon-on-insulator structure consisting of buried SiO2 layer implanted with Ge+ ions are studied in relation to the annealing temperature. On the basis of the results for high-resolution...

  • SiGe-on-insulator substrate using SiGe alloy grown Si(001). Ishikawa, Yukari; Shibata, N. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p983 

    Discusses the performance of low-energy oxygen ion implantation on a pseudomorphic silicon germanium alloy grown Si(001) of uniform composition in an attempt to create a SiGe-on-insulator substrate using the separation-by-implanted-oxygen technique. Importance of choosing a small Ge composition...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics