TITLE

Temperature-dependent transition from two-dimensional to three-dimensional growth in highly

AUTHOR(S)
Wang, S.M.; Andersson, T.G.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates critical layer thickness (CLT) based on the three-dimensional (3D) growth of indium gallium arsenide/gallium arsenide single quantum wells. Growth of the structures by molecular beam epitaxy; Effect of CLT on growth temperature; Relationship between 3D island formation and strain energy in the layers.
ACCESSION #
4250672

 

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