Ion-induced fluorination in electron cyclotron resonance etching of silicon studied by x-ray

Vender, David; Haverlag, Marco
December 1992
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3136
Academic Journal
Investigates the effect of fluorination on the ion-enhanced etching of silicon in fluorine-based plasmas. Effect of etching on silicon surface; Dependence of fluorinated silicon layer on self-bias voltage; Relationship between etch rate of silicon and thickness of fluorocarbon overlayer.


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