TITLE

High-density optical storage based on nanometer-size arsenic clusters in low-temperature-growth

AUTHOR(S)
Nolte, D.D.; Melloch, M.R.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3098
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the application of low-temperature-growth gallium arsenide (LT GaAS) for holographic gratings. Establishment of LT GaAs as a photorefractive material; Provision of arsenic clusters for high-density optical storage medium; Exhibition of electro-optic effect in arsenic clusters.
ACCESSION #
4250658

 

Related Articles

  • Photorefractive characterization of deep level compensation in semi-insulating GaAs. Partovi, Afshin; Garmire, Elsa M.; Valley, George C.; Klein, Marvin B. // Applied Physics Letters;12/25/1989, Vol. 55 Issue 26, p2701 

    We show that photorefractive beam coupling can be used for deep level spectroscopy in semi-insulating GaAs. In four samples cut from different locations in a single boule of GaAs, we find the same degree of compensation as determined from absorption spectra, Hall measurements, and the...

  • Photorefractive wave mixing in undoped liquid encapsulated Czochralski GaAs at 1.5 mum.... Delaye, P.; de Montmorillon, L.A. // Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2640 

    Measures the photorefractive performance of undoped gallium arsenide (GaAs). Use of the concentrations of electroluminescence2 in the experiment; Explanation of the photorefractive effect in undoped liquid encapsulated Czochralski GaAs; Sensitivity range of GaAs.

  • Vapor phase synthesis of crystalline nanometer-scale GaAs clusters. Saunders, Winston A.; Sercel, Peter C. // Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p950 

    Analyzes the synthesis of crystalline nanometer-scale gallium arsenide clusters. Role of homogeneous nucleation in the cluster formation; Use of high resolution electron microscopy and diffraction; Evidence on the existence of faceted zincblende crystal structures; Implication for quantum...

  • Ab initio theoretical study of small GaAs clusters. Graves, Richard M.; Scuseria, Gustavo E. // Journal of Chemical Physics;11/1/1991, Vol. 95 Issue 9, p6602 

    Theoretical calculations for the closed-shell ground state of small GaxAsy clusters (x=y; x=2–4) are carried out at the self-consistent field (SCF) Hartree–Fock level of theory, using analytic energy gradients for rapid geometry optimization. In addition, for Ga2As2, the SCF...

  • First principle study on the bonding mechanism of nanoring structure Ga8As8. Sun, L. Z.; Chen, X. S.; Zhou, X. H.; Sun, Y. L.; Quan, Zh. J.; Wei Lu // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Jul2005, Vol. 34 Issue 1-3, p47 

    The stable ring structure of Ga8As8 has been found by the first principle calculations previously. Here we use the full-potential linearized augmented plane wave (FP-LAPW) method within the framework of the density functional approach to investigate the electronic structure and bonding mechanism...

  • Image processing by four-wave mixing in photorefractive GaAs. Gheen, Gregory; Cheng, Li-Jen // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1481 

    Three image processing experiments were performed by degenerate four-wave mixing in photorefractive GaAs. The experiments were imaging by phase conjugation, edge enhancement, and autocorrelation. The results show that undoped, semi-insulating, liquid-encapsulated Czochralski-grown GaAs crystals...

  • Transient nonlinear optical properties of δ-doped asymmetric superlattices measured by picosecond electro-optic sampling. Ralph, Stephen E.; Capasso, Federico; Malik, Roger J. // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p626 

    We have performed the first picosecond time-resolved measurements of the photorefractive and nonlinear absorptive properties of asymmetric GaAs doping superlattices. The lack of inversion symmetry in these structures results in a net photoinduced electric field and, therefore, photorefractive...

  • Hybrid resonant/near-resonant photorefractive structure: InGaAs/GaAs multiple quantum wells. Wang, Q. N.; Nolte, D. D.; Melloch, M. R. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p4254 

    Presents the electro-optic and photorefractive properties of a hybrid photorefractive quantum-well/bulk-semiconductor structure with shallow indium gallium arsenide (InGaAs) multiple quantum wells grown on semi-insulating GaAs. Features of the structure; Function of photorefractive wells;...

  • Structural, magnetic, and transport investigations of CrTe clustering effect in (Zn,Cr)Te system. Sreenivasan, M. G.; Teo, K. L.; Cheng, X. Z.; Jalil, M. B. A.; Liew, T.; Chong, T. C.; Du, A. Y.; Chan, T. K.; Osipowicz, T. // Journal of Applied Physics;9/1/2007, Vol. 102 Issue 5, p053702 

    We investigate the structural, transport, and magnetic behaviors of (Zn,Cr)Te system without additional carrier doping grown by low temperature molecular-beam epitaxy on GaAs (100) substrates. For the growth of Zn1-xCrxTe with x=0.14, high-resolution transmission electron microscopy shows the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics