Novel infrared detector concept utilizing controlled epitaxial doping profiles

Liu, H.C.; Noel, J.-P.
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3298
Academic Journal
Proposes a infrared detector concept using controlled doping epitaxy. Use of thin heavily doped silicon layers for infrared absorption; Provision of flexibility by epitaxial growth technique; Desirability of silicon-based materials for long-wavelength infrared applications.


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