TITLE

Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta[sub 2]O[sub 5] films

AUTHOR(S)
Lao, G.Q.; Kwong, D.L.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3286
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the metal-oxide-semiconductor characteristics of chemical vapor deposited Ta[sub 2]O[sub 5] films. Attainment of excellent interface; Use of different top dielectrics; Suppression of leakage current; Manipulation of leakage current by Fowler-Nordheim tunneling; Enhancement of the interface state generation.
ACCESSION #
4250638

 

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