Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta[sub 2]O[sub 5] films

Lao, G.Q.; Kwong, D.L.
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3286
Academic Journal
Describes the metal-oxide-semiconductor characteristics of chemical vapor deposited Ta[sub 2]O[sub 5] films. Attainment of excellent interface; Use of different top dielectrics; Suppression of leakage current; Manipulation of leakage current by Fowler-Nordheim tunneling; Enhancement of the interface state generation.


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