Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering

Sela, I.; Bolognesi, C.R.
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3283
Academic Journal
Examines the interface structure and quality of molecular-beam-epitaxy grown aluminum antimonide/indium arsenide/aluminum antimonide quantum wells. Use of Raman scattering technique; Variation of growth temperature and interface composition; Observation of indium antimonide modes in all samples.


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