Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor

Hobson, W.S.; Pearton, S.J.
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3259
Academic Journal
Compares gallium and arsenic precursors for gallium arsenide (GaAs) carbon (C) doping by organometallic vapor phase epitaxy using carbon tetrachloride. Characterization of the GaAs:C layers; Reduction of carbon incorporation; Existence of the electrically inactive C-hydrogen complexes.


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