TITLE

Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor

AUTHOR(S)
Hobson, W.S.; Pearton, S.J.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3259
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares gallium and arsenic precursors for gallium arsenide (GaAs) carbon (C) doping by organometallic vapor phase epitaxy using carbon tetrachloride. Characterization of the GaAs:C layers; Reduction of carbon incorporation; Existence of the electrically inactive C-hydrogen complexes.
ACCESSION #
4250629

 

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