InAs[sub 0.85]Sb[sub 0.15] infrared photodiodes grown on GaAs and GaAs-coated Si by molecular

Dobbelaere, W.; De Boeck, J.
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3256
Academic Journal
Examines InAs[sub 0.85]Sb[sub 0.15] infrared photodiodes grown on gallium arsenide (GaAs) and GaAs-coated silicon substrates through molecular beam epitaxy. Use of transmission electron microscopy; Analysis of the electrical characteristics of the photodiodes; Measurement of detector noise and spectral response.


Related Articles

  • Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy. Romero, O.S.; Aragon, A.A.; Rahimi, N.; Shima, D.; Addamane, S.; Rotter, T.J.; Mukherjee, S.; Dawson, L.R.; Lester, L.F.; Balakrishnan, G. // Journal of Electronic Materials;Apr2014, Vol. 43 Issue 4, p926 

    We investigate a mechanism causing shorting of large area GaSb diodes grown on GaSb substrates using molecular beam epitaxy (MBE). The source of these shorts is determined to be large crystallographic defects on the surface of the diodes that are formed around droplets of gallium ejected from...

  • Coincident site lattice-matched InGaN on (111) spinel substrates. Norman, A. G.; Dippo, P. C.; Moutinho, H. R.; Simon, J.; Ptak, A. J. // Applied Physics Letters;4/9/2012, Vol. 100 Issue 15, p152106 

    Coincident site lattice-matched wurtzite (0001) In0.31Ga0.69N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl2O4 spinel substrate. The coincident site lattice matching condition involves a 30° rotation between the lattice of...

  • Growth and characterization of a delta-function doping layer in Si. Zeindl, H. P.; Wegehaupt, T.; Eisele, I.; Oppolzer, H.; Reisinger, H.; Tempel, G.; Koch, F. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1164 

    We present a procedure whereby a sheet of donor atoms is incorporated in (100) Si during molecular beam epitaxial growth. Analysis by secondary ion mass spectroscopy and transmission electron microscopy shows that the width of such δ-function doping layers is only a few lattice planes....

  • Quasi-one-dimensional CaF[sub 2] islands formed on Si(001) by molecular beam epitaxy. Loretto, D.; Ross, F.M. // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2363 

    Demonstrates the growth of quasi-dimensional CaF[sub 2] islands on silicon(001) by molecular beam epitaxy. Use of conventional and high resolution transmission electron microscopy; Facets bounding the growth of the islands in two symmetry-equivalent orientations; Attribution of the unusual...

  • Alloy inhomogeneities in InAlAs strained layers grown by molecular-beam epitaxy. Peiró, F.; Cornet, A.; Morante, J. R.; Clark, S. A.; Williams, R. H. // Journal of Applied Physics;3/1/1992, Vol. 71 Issue 5, p2470 

    Presents a transmission electron microscopy study that characterized In[subx]Al[sub1-x]As layers grown by molecular beam epitaxy on InP substrates. Methodology; Results.

  • Optically active three-dimensionally confined structures realized via molecular beam epitaxical.... Rajkumar, K.C.; Madhukar, A.; Rammohan, K.; Rich, D.H.; Chen, P.; Chen, L. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2905 

    Presents the optically active three-dimensionally confined semiconductor volumes through the step molecular beam epitaxial growth. Fabrication of the materials on pyramidal mesas on (111)boron substrates; Use of the transmission electron microscopy; Lateral linear dimension of the emissions.

  • Accurately determining the composition and thickness of layers in a GaAs/InGaAs superlattice. Jones, K. A.; Cole, M. W.; Cooke, P.; Flemish, J. R.; Pfeffer, R. L.; Shen, H. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1609 

    Presents information on a study which determined the thickness and composition of molecular beam epitaxy grown in a superlattice structure with nominal indium concentrations by transmission electron microscopy. Background of the study; Methodology of the study; Results and discussion.

  • Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer. Ponchet, A.; Rocher, A.; Emery, J-Y.; Starck, C.; Goldstein, L. // Journal of Applied Physics;3/1/1995, Vol. 77 Issue 5, p1977 

    Examines the GaInAsP/InP multilayer grown by gas source molecular beam epitaxy. Assessment of interplanar spacing variations based on high resolution transmission electron microscopy images; Strain distribution in a common zero-net strained superlattices; Effect of nonplanar interfaces on...

  • On the origin of misfit dislocations in InGaAs/GaAs strained layers. Dixon, R. H.; Goodhew, P. J. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3163 

    Presents a study which examined the In[subx]Ga[sub1-x]As/GaAs (x<0.25) strained layers grown by molecular-beam epitaxy using plan-view transmission electron microscopy. Details on the experiment; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics