Arsenic precipitates in Al[sub 0.3]Ga[sub 0.7]As/GaAs multiple superlattice and quantum well

Mahalingam, K.; Otsuka, N.
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3253
Academic Journal
Examines arsenic precipitates in Al[sub 0.3]Ga[sub 0.7]As/GaAs multiple superlattices and quantum well structures grown at low substrate temperature by molecular beam epitaxy. Use of transmission electron microscopy; Diffusion of excess arsenic atoms towards the neighboring regions; Result of the difference in precipitate/matrix interfacial energies.


Related Articles

  • Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy. Bennett, Brian R.; Shanabrook, B.V. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p949 

    Examines the interface stoichiometry in indium arsenide/gallium antimonide superlattices grown by molecular beam epitaxy. Use of migration enhanced epitaxial techniques to prepare superlattices with indium antimonide and gallium arsenide-like interfaces; Factors allowing the use of x-ray...

  • Structural and compositional variations in ZnSnP[sub 2]/GaAs superlattices. Lita, B.; Beck, M.; Goldman, R. S.; Goldman, R.S.; Seryogin, G. A.; Seryogin, G.A.; Nikishin, S. A.; Nikishin, S.A.; Temkin, H. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    We have investigated the structural and compositional uniformity of a set of ZnSnP[sub 2]/GaAs superlattices grown by gas-source molecular-beam epitaxy. Cross-sectional scanning tunneling microscopy reveals an asymmetry in interface abruptness, with the ZnSnP[sub 2] on GaAs interfaces apparently...

  • Two-dimensional arsenic precipitation by In delta doping during low temperature molecular beam.... Cheng, T.M.; Chang, C.Y. // Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2517 

    Examines the two-dimensional arsenic precipitation by indium delta doping during low temperature molecular beam epitaxy growth of gallium arsenide or aluminum gallium arsenide. Role of interfacial energy difference in the accumulation and depletion of precipitates; Use of electronic or...

  • Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature. Hayakawa, T.; Suyama, T.; Takahashi, K.; Kondo, M.; Yamamoto, S.; Yano, S.; Hijikata, T. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p952 

    The interface disorder of quantum wells grown by molecular beam epitaxy at high substrate temperature is investigated by low-temperature photoluminescence. The excitonic emission from a single quantum well is a single sharp peak, and the well width precisely determined from the emission peak...

  • Interface morphology in molecular beam epitaxy grown In[sub 0.5]Ga[sub 0.5]As/GaAs strained.... Wang, S.M.; Andersson, T.G.; Ekenstedt, M.J. // Applied Physics Letters;10/21/1991, Vol. 59 Issue 17, p2156 

    Examines the interface morphology of strained In[sub 0.5]Ga[sub 0.5]As/gallium arsenide quantum wells (QW). Growth of QW by molecular beam epitaxy; Dependence of layer thickness on growth temperature; Reason for the onset of QW three-dimensional growth.

  • Growth of abrupt InGaAs(P)/In(GaAs)P heterointerfaces by gas source molecular beam epitaxy. Shiau, Guang-Jye; Chao, Chih-Ping; Burrows, Paul E.; Forrest, Stephen R. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p201 

    Demonstrates a novel method for the growth of abrupt InGaAs(P)/In(GaAs)P heterojunctions by gas source molecular beam epitaxy. Examination of heterointerface abruptness; Association of high quality heterointerfaces with the properties of optoelectronic devices; Methods for the growth of the...

  • Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam.... Wagner, J.; Schmitz, J. // Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1293 

    Investigates the interface formation in indium-arsenic/aluminum-antimony quantum wells grown by molecular-beam epitaxy. Applications of the effusion cell shutter sequence at the interfaces; Cause of the reduction of the valley current of InAs/AlSb/GaSb tunnelling diodes; Comparison between the...

  • Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy. Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo // Applied Physics Letters;9/2/2002, Vol. 81 Issue 10, p1803 

    GaN/AlN multiple-quantum-well structures were grown by molecular beam epitaxy. Abrupt interfaces and good periodicity were confirmed. Absorption measurements indicated that intersubband absorptions occurred at wavelengths of 1.3-2.2 µm. Spectral fits by Lorentzians suggested that the well...

  • Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy. Brandt, Oliver; Sun, Yue Jun; Schönherr, Hans-Peter; Ploog, Klaus H.; Waltereit, Patrick; Lim, Sung-Hwan; Speck, James S. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p90 

    We present a simple strategy that minimizes the impact of surface segregation of In during the growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy and simultaneously results in abrupt interfaces. The two ingredients of this strategy are (i) the use of a higher...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics