TITLE

Arsenic precipitates in Al[sub 0.3]Ga[sub 0.7]As/GaAs multiple superlattice and quantum well

AUTHOR(S)
Mahalingam, K.; Otsuka, N.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3253
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines arsenic precipitates in Al[sub 0.3]Ga[sub 0.7]As/GaAs multiple superlattices and quantum well structures grown at low substrate temperature by molecular beam epitaxy. Use of transmission electron microscopy; Diffusion of excess arsenic atoms towards the neighboring regions; Result of the difference in precipitate/matrix interfacial energies.
ACCESSION #
4250627

 

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