Low-temperature chemical vapor deposition of boron-nitride films using hydrogen azide

Ishihara, Ryoichi; Sugiura, Osamu
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3244
Academic Journal
Investigates the low-temperature chemical vapor deposition of boron-nitride films using hydrogen azide. Use of silicon as substrate; Determination of the optical and low-frequency dielectric constants; Revelation of steep current-voltage characteristics in film.


Related Articles

  • Electrical properties of Ta[sub 2]O[sub 5] films obtained by plasma enhanced chemical vapor.... Devine, R.A.B.; Vallier, L.; Autran, J.L.; Paillet, P.; Leray, J.L. // Applied Physics Letters;3/25/1996, Vol. 68 Issue 13, p1775 

    Investigates the electrical properties of Ta[sub 2]O[sub 5] films obtained by plasma enhanced chemical vapor deposition. Presence of significant levels of carbon in the deposited films; Determination of refractive indices, dielectric constants, and leakage currents; Presence of a reversible...

  • Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films. Liu, Chao; Xiao, Xingcheng; Wang, Jian; Shi, Bing; Adiga, Vivekananda P.; Carpick, Robert W.; Carlisle, John A.; Auciello, Orlando // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p074115 

    Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH4 gas mixture used in the microwave plasma...

  • A frequency response and transient current study of ...-Ta2O5: Methods... Mattsson, M. Stromme; Niklasson, G. A. // Journal of Applied Physics;2/15/1999, Vol. 85 Issue 4, p2185 

    Presents information on a study which dielectrically characterized ...-Ta2O5 samples made by chemical vapor deposition technique. Film preparation and characterization; Description of the electric measurements; Analysis of dielectric measurements; Conclusion.

  • Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates. Suryanarayanan, G.; Khandekar, Anish A.; Kuech, Thomas F.; Babcock, Susan E. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1977 

    Substantial defect reduction was achieved in InAs/GaAs by lateral epitaxial overgrowth in which InAs was grown on mask-patterned (100) GaAs with stripe-shaped windows of various widths by metalorganic chemical vapor deposition. The InAs growth morphology, crystal quality, and microstructure were...

  • Relaxed GexSi1-x films grown by rapid thermal processing chemical vapor deposition. Jung, K. H.; Kim, Y. M.; Kwong, D. L. // Applied Physics Letters;4/30/1990, Vol. 56 Issue 18, p1775 

    High quality, epitaxial, relaxed GexSi1-x layers have been grown by rapid thermal processing chemical vapor deposition. Relaxation is believed to be due primarily to the high deposition temperature of 1000 °C and occurred through the formation of an asymmetric misfit dislocation network...

  • Preparation of Ti[sub 2]Ba[sub 2]CaCu[sub 2]O[sub 8] superconducting thin films on LaAlO[sub 3].... Ladd, J.A.; Collins, B.T.; Matey, J.R.; Zhao, J.; Norris, P. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1368 

    Reports on the preparation of single phase Tl[sub 2]Ba[sub 2]CaCu[sub 2] thin films on LaAlO[sub 3] substrates via a two-step deposition process. Deposition of the precursor films by metalorganic chemical vapor deposition; Substrate temperature; Orientation of the resultant films.

  • Excimer-laser-induced sub-0.5-mum patterning of WO[sub 3] thin films. Rothschild, M.; Forte, A.R. // Applied Physics Letters;9/30/1991, Vol. 59 Issue 14, p1790 

    Examines the deposition of amorphous WO[sub 3] thin films in a plasma-enhanced chemical vapor deposition system. Mechanism for laser-induced etch selectivity; Difference in the etch rates; Achievement of submicrometer patterning with single pulse fluence.

  • Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor.... Vargas, Roberto; Goto, Takashi // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1094 

    Examines the growth of iron and platinum epitaxial films on sapphire by metalorganic chemical vapor deposition. Achievement of the epitaxial growth at deposition temperatures; Determination of the film orientation and epitaxial relationship between films and substrates.

  • Two kinds of nitrogen atoms in nitrogen-substituted, highly crystalline graphite prepared by.... Matsui, T.; Yudasaka, M. // Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2145 

    Describes the preparation of nitrogen-substituted graphite thin films by chemical vapor deposition using pyrrole as a starting material. Use of nickel as the substrate material; Closeness of the interlayer spacing of the films to that of single-crystal graphite; Observation of two x-ray...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics