TITLE

Low-temperature chemical vapor deposition of boron-nitride films using hydrogen azide

AUTHOR(S)
Ishihara, Ryoichi; Sugiura, Osamu
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3244
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the low-temperature chemical vapor deposition of boron-nitride films using hydrogen azide. Use of silicon as substrate; Determination of the optical and low-frequency dielectric constants; Revelation of steep current-voltage characteristics in film.
ACCESSION #
4250624

 

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