Growth mode and dislocation distribution in the ZnSe/GaAs (100) system

Guha, S.; Munekata, H.
June 1992
Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3220
Academic Journal
Investigates the effect of the initial growth mode on the dislocation structure in zinc selenide epilayers grown on gallium arsenide (100) by molecular beam epitaxy. Comparison of dislocation distribution in a three-dimensional and two-dimensional growth mode; Measurement of the elastic strain relief.


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