TITLE

Voltage gain in the single-electron transistor

AUTHOR(S)
Zimmerli, G.; Kautz, R.L.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2616
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Assesses the voltage gain in the coupled single-electron transistor. Relevance of high gate resistance on the proposed electron-counting experiment; Effect of gate voltage on single-electron tunneling; Changes in the effective island charge following the application of the gate capacitor.
ACCESSION #
4250609

 

Related Articles

  • Role of interfacial roughness on bias-dependent magnetoresistance and transport properties in magnetic tunnel junctions. Huang, J. C. A.; Hsu, C. Y.; Liao, Y. F.; Lin, M. Z.; Lee, C. H. // Journal of Applied Physics;11/15/2005, Vol. 98 Issue 10, p103504 

    The effects of metal-insulator interfacial roughness, modulated by Ar+ irradiation, on bias dependence of tunnel magnetoresistance (TMR) and electrical transport of CoFe–AlOx–CoFe magnetic tunnel junctions (MTJs) have been studied. Reduction of TMR ratio and asymmetric TMR falloff...

  • YBa2Cu3O7-δ-Ag-Al/Al2O3/Pb tunnel junctions based on the superconducting proximity effect. Gijs, M. A. M.; Scholten, D.; van Rooy, Th.; Gerrits, A. M. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2600 

    YBa2Cu3O7-δ-Ag-Al/Al2O3/Pb superconducting tunnel junctions with high subgap resistance were fabricated using the proximity effect induced superconductivity in the Ag-Al layer by the YBa2Cu3O7-δ film. At low temperature an energy gap of 9–10 meV is found to be induced in the...

  • Electric variation of the resistance of superconducting tunnel junctions. Gundlach, K. H.; Konishi, H. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p441 

    We report on the change of normal resistance in tunnel junctions brought about by the application of a sufficiently large voltage at temperatures of 4.2 K and lower. This effect can be of use in various branches of electron and Cooper-pair tunneling, including the optimization of quasiparticle...

  • Si/SiGe electron resonant tunneling diodes with graded spacer wells. Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Holla¨nder, B.; Mantl, S. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4184 

    Resonant tunneling diodes have been fabricated using graded Si[sub 1-x]Ge[sub x] (x=0.3→0.0) spacer wells and strained Si[sub 0.4]Ge[sub 0.6] barriers on a relaxed Si[sub 0.7]Ge[sub 0.3] n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is...

  • Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure. Chen, W.K.; Cheng, R.H. // Applied Physics Letters;9/8/1997, Vol. 71 Issue 10, p1373 

    Examines the differential resistance in single-barrier heterostructures. Applicability of the negative differential resistance phenomenon in millimeter wavelength detection and generation; Influence of a pseudomorphic resonant tunneling structure in study advancements; Effect of high barrier...

  • Photocurrent generation in single electron tunneling transistors. Tageman, Ola // Low Temperature Physics;Mar1999, Vol. 25 Issue 3, p214 

    Analyzes a single-electron tunneling transistor with a non-equilibrium mode population in one of the leads. Modeling of transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a gallium arsenide/aluminum gallium arsenide heterostructure;...

  • Charge sensitivity of a single electron transistor. Hanke, Ulrik; Galperin, Yu. M. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1847 

    Investigates the charge sensitivity of a capacitive-coupled single electron transistor with analytical and numerical calculations. Increase in transconductance-to-noise ratio; Importance of Coulomb energy to the correlated single electron tunneling; Demonstration of a single-electron charging...

  • Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island.... Nakajima, Anri; Futatsugi, Toshiro // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p353 

    Fabricates a silicon single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by a self-aligned process. Exhibition of drain current oscillations by the device; Observation of single electron tunneling from the channel to the floating dot gate; Development of...

  • Mechanical tuning of tunnel gaps for the assembly of single-electron transistors. Carlsson, Sven-Bertil; Junno, Tobias; Montelius, Lars; Samuelson, Lars // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1461 

    Studies the mechanical tuning of tunnel gaps for the assembly of single-electron transistors. Fabrication of gold single-electron transistors; Formation of statically stable tunnel gaps between the discs and lithographically defined electrodes.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics