TITLE

Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

AUTHOR(S)
Kalish, R.; Kramer, L.-Y.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2589
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the local intermixing of gallium aluminum arsenide quantum wells using an individual ion implant tracks. Use of ion-beam mixing in formulating lower dimensional structures in quantum wells; Effects of ion implantation on photoluminescence spectra; Effectiveness of ion beam technique in fabricating quantum structures.
ACCESSION #
4250600

 

Related Articles

  • Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing. Janz, S.; Buchanan, M.; van der Meer, P.; Wasilewski, Z. R.; Xu, D.-X.; Piva, P.; Mitchell, I. V.; Akano, U. G.; Fiore, A. // Applied Physics Letters;6/15/1998, Vol. 72 Issue 24 

    The change in the second-order nonlinear susceptibility of an asymmetric quantum well (AQW) superlattice induced by ion beam-enhanced intermixing has been measured. The surface-emitted second-harmonic intensities radiated from implanted and masked areas of an AQW waveguide were measured and...

  • A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells. Dao, L. V.; Gal, M.; Carmody, C.; Tan, H. H.; Jagadish, C. // Journal of Applied Physics;11/1/2000, Vol. 88 Issue 9, p5252 

    Compares the time integrated photoluminescence (PL) and time resolved PL of several lattice matched quantum wells intermixed either by ion implantation or an impurity-free method. Carrier capture rates into quantum wells and carrier relaxation from wells; Reason for the difference in the PL...

  • Local Ga implantation with focused ion beam and ambipolar lateral carrier transport in strained.... Okubo, A.; Fukatsu, S. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2582 

    Describes lateral carrier diffusion in strained silicon[sub 1-x]germanium [sub x]/silicon quantum well using two-dimensional grating geometry. Definition of the grating geometry by local gallium implantation with focused ion beam; Occurrence of dominance switch of steady-state...

  • Large blueshifting of InGaAs/InP quantum-well band gaps by ion implantation. Zucker, J.E.; Tell, B. // Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3036 

    Demonstrates the phosphorous ion implantation in InGaAs/InP quantum wells to produce large blueshifts of the band edge. Use of the reproducible technique of lateral band-gap control in quantum-well photonic integrated circuits; Production of low-loss waveguide regions for interconnects of...

  • Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation. Charbonneau, S.; Poole, P.J. // Applied Physics Letters;11/13/1995, Vol. 67 Issue 20, p2954 

    Examines a technique using high energy ion implantation to enhance the thermally driven interdiffusion of quantum wells. Growth of unstrained laser structure using metalorganic chemical vapor deposition; Assessment of the optical quality of band-gap shifted material using low-temperature...

  • Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation. Labrie, D.; Lafontaine, H.; Rowell, N.; Charbonneau, S.; Houghton, D.; Goldberg, R. D.; Mitchell, I. V. // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p993 

    A demonstration of quantum well intermixing using ion implantation in Si1-xGex/Si strained-layer heterostructures is presented. The quantum-well related photoluminescence lines of implanted and annealed samples are blue shifted by up to 40 meV relative to those measured in annealed-only samples....

  • Ion-implantation induced interdiffusion in CdTe/CdMgTe quantum wells. Tonnies, D.; Bacher, G. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3194 

    Examines the influence of ion implantation on the interdiffusion of cadmium (Cd) and magnesium (Mg) in CdTe/CdMgTe single quantum wells. Effect rapid thermal annealing on the samples; Dependence of the energy shift on the ion dose and annealing temperature; Enhancement of the interdiffusion of...

  • Quantum-well intermixing for optoelectronic integration using high energy ion implantation. Charbonneau, S.; Poole, P. J.; Piva, P. G.; Aers, G. C.; Koteles, E. S.; Fallahi, M.; He, J.-J.; McCaffrey, J. P.; Buchanan, M.; Dion, M.; Goldberg, R. D.; Mitchell, I. V. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p3697 

    Studies quantum-well intermixing for optoelectronic integration using high energy ion implantation. Method of the study; Results and discussion; Conclusion.

  • Experimental study of implantation-induced disordering in InGaAsP strained.... Elenkrig, B.B.; Thompson, D.A. // Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1239 

    Examines the implantation-induced disordering in strained multiple-quantum-well indium-gallium-arsenic-phosphorus (InGaAsP) hetrostructures. Differences in the ion intermixing processes; Occurrence of spectral blueshift in similar implantation and anneal conditions; Composition differences...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics