TITLE

Luminescence of strained Si[sub 1-x]Ge[sub x] alloy layers grown by molecular beam epitaxy

AUTHOR(S)
Arbet-Engels, V.; Tijero, J.M.G.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2586
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the luminescence of strained silicon germanide (SiGe) alloy layers grown by molecular beam epitaxy. Use of high resolution x-ray diffraction in confirming strained alloy layers; Utility of photoluminescence spectroscopy in measuring the band gap of SiGe grown layers; Efficiency of atomic deuterium in passivating nonradiative recombination centers.
ACCESSION #
4250599

 

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